X-ray detector based on field effect transistor structure and preparation method thereof

Abstract

The invention discloses an X-ray detector based on a field effect transistor structure and a preparation method of the X-ray detector, and the X-ray detector comprises an X-ray absorption layer capable of absorbing X-rays, a semiconductor channel layer, a gate electrode, a gate dielectric layer, a source electrode, a drain electrode and a substrate. After the X-rays are irradiated to the X-ray absorption layer of the X-ray detector, electron-hole pairs are generated in the X-ray absorbing layer, electrons or holes generated by X-ray irradiation can be transferred from the X-ray absorption layer to the semiconductor channel layer, and the electrons or holes flow between the source electrode and the drain electrode to generate current. Compared with a traditional X-ray detector based on a diode, a photoelectric transistor combines the advantages of a transistor and a conventional photoconductive device, obtains efficient charge transfer by means of a heterojunction structure, generates ahuge gain amplification effect by means of efficient transmission of carriers in a semiconductor channel, and therefore, the high-performance X-ray detector with ultrahigh sensitivity and ultralow detection limit is obtained.

Description

technical field [0001] The invention belongs to the field of X-ray detectors, in particular to an X-ray detector based on a field-effect transistor structure and a preparation method thereof. Background technique [0002] X-ray detectors have important application value in the fields of medical diagnosis, scientific research, industrial non-destructive testing and national defense security. X-ray detectors are mainly based on two photoelectric conversion mechanisms: one is the direct X-ray detector, which directly converts the X-ray signal into an electrical signal through a photosensitive semiconductor material; the other is the indirect X-ray detector, which first passes through the scintillation The body converts X-rays into visible light, and then completes the conversion of optical signals into electrical signals through visible light detectors. At present, X-ray photodetectors based on these two photoelectric conversion mechanisms have been commercialized, but there a...

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Problems solved by technology

[0003] In order to overcome the deficiencies of the prior art, the technical problem to be solved by the present invention is to provide a variety of new high-performance field-effect transistor X-ray detectors with heterojunctions composed of channel semiconductors and X-ray photoconductive materials, which are used to solve current problems. In the existing technology, the device is thick and bulky, the material growth and preparation process are complicated, the cost is high, the sensitivity is low, the limit detection dose rate is high, and the flexible and portable X-ray detector cannot be realized.

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