Active driving circuit and method of MOSFET

Abstract

The invention provides an active driving circuit and method of an MOSFET. The active driving circuit comprises a push-pull module, a resistor module and a pulse generation module. The push-pull moduleis connected with the grid electrode of the driven MOSFET through the resistor module, one end of the pulse generation module is connected with the grid electrode of the driven MOSFET, and the otherend of the pulse generation module is connected with the resistor module. The variable driving resistance is provided for the driven MOSFET based on the driving voltage of the driven MOSFET generatedby the push-pull module and the pulse signal generated by the pulse generation module based on the acquired gate-source voltage of the driven MOSFET. According to the circuit, a driving resistor doesnot need to be added, and the variable driving resistor is provided through the resistor module, so that the switching time of the MOSFET is shortened, the switching loss and cost are reduced, and thesuppression effect is good; the circuit is simple in structure, and current and voltage overshoot and oscillation in the switching process of the device can be effectively suppressed on the basis ofsacrificing relatively small MOSFET switching loss.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to an active drive circuit and method for a MOSFET. Background technique [0002] Metal-oxide-semiconductor field-effect transistor MOSFET is a semiconductor device widely used in analog circuits and digital circuits. With its advantages of fast switching speed, low power consumption, stable performance and strong radiation resistance, it is gradually replacing triodes and is widely used. In photovoltaic inverters, electric vehicles and wind power generation and other fields. [0003] Compared with Si (silicon) materials, SiC (silicon carbide) materials have the advantages of higher critical breakdown field strength, higher forbidden band width, higher saturated carrier mobility and higher thermal conductivity. Therefore, compared with Si MOSFET, SiC MOSFET has higher breakdown voltage, lower on-resistance, faster switching speed and higher operating temperature. However...

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Problems solved by technology

[0005] In order to overcome the shortcomings of poor suppression effect, high cost, long switching time and large switching loss in the above-mentioned prior art, the present invention provides an active drive circuit for MOSFET, including a push-pull module, a resistance module and a pulse generation module;

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