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HiPIMS system and method for reducing HiPIMS discharge current delay

A discharge current and power supply technology, applied in the field of magnetron sputtering equipment, can solve the problems of intensifying gas atomic dilution effect, increasing the production cost of power supply, uncontrollable negative effects, etc., achieving rapid HiPIMS gas breakdown discharge and suppressing arc discharge produce, low-cost effect

Active Publication Date: 2020-12-15
BEIHANG UNIV
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  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantages of this method are: the higher average discharge power puts forward higher requirements for target cooling, which will increase the temperature of the target; and the continuous glow discharge suppresses the gas particles near the target surface during the pulse off period. Backfilling, intensifies the dilution effect of gas atoms, resulting in weakened sputtering effect
What is even more concerning is that the composite DC HiPIMS increases the production cost of the power supply and hinders the promotion of this technology in industrial production.
In addition, some researchers have tried to increase the target voltage to achieve rapid gas breakdown, but this method also increases the resorption rate of target ions while increasing the target voltage, and it is very likely to produce a change from glow discharge to The transformation of arc discharge also brings uncontrollable negative effects while improving discharge

Method used

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  • HiPIMS system and method for reducing HiPIMS discharge current delay
  • HiPIMS system and method for reducing HiPIMS discharge current delay

Examples

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example 1

[0044] figure 2 When the power supply inductance is 50μH and the capacitive reactance of the selected capacitor is 22.5nF, at the output terminal of the power supply -500V, the waveform diagram of the target voltage and target current under the condition that the maximum oscillation voltage is -800V. When the gas is not broken down, the voltage can be maintained at -800V until the gas is broken down. Discharge conditions: the gas is argon at 0.5Pa, the target material is Cr target, the pulse width is 200μs, and the pulse frequency is 50Hz.

[0045] image 3 It is ordinary HiPIMS discharge and auxiliary circuit oscillating HiPIMS discharge, when the power supply inductance is 50μH, and the capacitive reactance of the selected capacitor is 22.5nF, the waveform diagram of the target voltage and target current under the condition of -800V at the output terminal of the power supply. Discharge conditions: the gas is argon at 0.5Pa, the target material is Cr target, the pulse widt...

example 2

[0055] Figure 4 It is a graph of the relationship between the current delay time and the output terminal voltage of the power supply (that is, the target voltage when the voltage is stable) in different discharge modes. The figure contains ordinary HiPIMS, with auxiliary circuit oscillating HiPIMS, whose capacitance values ​​are 22.5nF, 55nF, 110nF and 220nF respectively. Discharge conditions: the gas is argon at 0.5Pa, the target material is Cr target, the pulse width is 200μs, and the pulse frequency is 50Hz.

[0056] see Figure 4 , the scheme of example 2 replaces the capacitor 22.5nF in the scheme of example 1 with 55nF, the relationship between the current delay time and the voltage is as follows Figure 4 As shown, other steps are the same as Example 1.

example 3

[0058] see Figure 4 , the scheme of example 3 replaces the capacitor 22.5nF in the scheme of example 1 with 110nF, the relationship between the current delay time and the voltage is as follows Figure 4 As shown, other steps are the same as Example 1.

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Abstract

The invention provides an HiPIMS system and a method for reducing HiPIMS discharge current delay. The HiPIMS system comprises a vacuum chamber and a power supply; the vacuum chamber comprises a cathode target; the power supply is provided with an inductor at the output end of the anode; a capacitor is connected between the cathode target and the anode in parallel; the capacitor and the inductor form an LC series oscillation circuit; high voltage generated by LC oscillation is utilized, and the high voltage generated by LC oscillation is output to the cathode target; and quick gas breakdown isrealized by utilizing high voltage generated by LC oscillation. Under the condition that an HiPIMS power supply and extra configuration do not need to be changed, the HiPIMS system provided by the invention realizes rapid HiPIMS gas breakdown discharge through oscillation of an auxiliary circuit, and increases the input energy to plasma in a pulsing period.

Description

technical field [0001] The present invention relates to equipment and methods of magnetron sputtering, in particular to high-energy impact magnetron sputtering (HiPIMS: High-Power Impulse Magnetron Sputtering). Background technique [0002] The typical characteristics of HiPIMS (High-Power Impulse Magnetron Sputtering) technology lie in its low duty cycle (~1%), low frequency (~10-1000Hz) and high peak power (MW) pulse discharge model. Pulse discharge will inevitably face the process of gas breakdown, so compared with HiPIMS negative pulse discharge voltage, there will be a delay of several microseconds to tens of microseconds in the initial stage of discharge current, especially at relatively low voltage and pressure. Under the circumstances, it is very obvious, and there may even be a phenomenon that it cannot be discharged. In recent years, through continuous exploration of HiPIMS, researchers have found that short pulses and low pressure seem to be more beneficial to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54
CPCC23C14/35C23C14/3485C23C14/54
Inventor 李刘合韩明月罗阳黄凯谢焕钧许浩徐长云
Owner BEIHANG UNIV
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