Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

SiC trench MOSFET and manufacturing process thereof

A manufacturing process and trench technology, which is applied in the field of SiC trench MOSFET manufacturing process, can solve problems such as no effect, and achieve the effect of less manufacturing process steps, low photolithography precision, and reduced complexity

Inactive Publication Date: 2020-12-15
JIANGSU HAIDONG SEMICON TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the defect in the prior art that due to the high hardness of SiC, when making trench MOSFET devices, the high-temperature pushing junction has basically no effect on the redistribution of doped impurities, thereby providing a SiC trench Trench MOSFET Manufacturing Process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SiC trench MOSFET and manufacturing process thereof
  • SiC trench MOSFET and manufacturing process thereof
  • SiC trench MOSFET and manufacturing process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0027] A SiC trench MOSFET manufacturing process, comprising the following steps:

[0028] S1: see figure 1 , select a SiC wafer substrate, and perform P-well implantation on the wafer substrate epitaxy.

[0029] S2: see figure 1 , deposit and grow the first layer mask, etch the first layer mask, and then implant N+source;

[0030] In one embodiment, the first mask is a hard mask with a silicon oxide-silicon nitride-silicon oxide structure. After the deposition of the first mask is completed, the first mask is removed by dry etching. The hard mask at the film trench is implanted to form the sou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of power devices, in particular to a SiC trench MOSFET and a manufacturing process thereof, aims to overcome the defect that in the prior art, due to over-high SiC hardness and high-temperature junction pushing, redistribution of doped impurities basically has no effect. The process is technically characterized by comprising: selecting a SiC wafer substrate, and performing P-well injection on the epitaxy of the wafer substrate; depositing a first layer of mask, and injecting N+ Source into the epitaxial surface of the wafer; and removing the first layer of mask, depositing a second layer of mask, and carrying out P+ injection; removing the second layer of mask, and then carrying out high-temperature annealing; and depositing a third layer of mask, opening the third layer of mask through etching, and carrying out gate oxide oxidation to form a gate oxide layer and polycrystalline deposition. According to the manufacturing process of the SiC trench MOSFET, doping is carried out firstly, then gate oxide and polycrystal manufacturing is carried out, due to the fact that a channel is of a vertical structure, the requirement for photoetching precision is low, the number of manufacturing process steps is small, and the complexity degree of the manufacturing process is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of power devices, in particular to a SiC trench MOSFET manufacturing process. Background technique [0002] Silicon carbide (SiC) belongs to the third-generation semiconductor material, a silicon and carbon compound with 1X1 covalent bonds, and its Mohs hardness is 13, second only to diamond (15) and boron carbide (14). SiC is very rare in the natural environment. It was first discovered in a small amount in meteorites 4.6 billion years ago when the solar system was born, so it is also called "semiconductor material that has experienced a time journey of 4.6 billion years." [0003] SiC has excellent properties as a semiconductor material, especially for power components used in power conversion and control. Compared with conventional silicon devices, it can achieve low on-resistance, high-speed switching, and high-temperature and high-voltage operation, so it is popular in power supplies, automobiles, rail...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L29/10H01L29/16H01L29/423H01L29/78
CPCH01L29/1033H01L29/1608H01L29/4236H01L29/66568H01L29/78
Inventor 夏华忠黄传伟李健谈益民吕文生
Owner JIANGSU HAIDONG SEMICON TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com