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Transparent Ga2O3 p-i-n heterostructure solar-blind ultraviolet light detector and preparation method thereof

A p-i-n, heterostructure technology, applied in the field of inorganic non-metallic material electronic device manufacturing process, can solve the problems of fragile photomultiplier tubes, large bias voltage, bulky and other problems, and achieves increased effective working area, large forbidden band Width, excellent performance

Inactive Publication Date: 2020-12-18
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, commercially available solar-blind detectors are usually bulky and fragile photomultiplier tubes and require large bias voltages, limiting their usefulness

Method used

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  • Transparent Ga2O3 p-i-n heterostructure solar-blind ultraviolet light detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] In this example, see figure 1 , a transparent Ga 2 o 3 The p-i-n heterostructure sun-blind ultraviolet detector consists of substrate, p-type NiO thin film, i-layer Ga 2 o 3 Thin film, n-type boron, gallium co-doped zinc oxide (BGZO) thin film and Au electrode are stacked and assembled to form a transparent thin film detector structure, and the substrate is made of quartz glass. Transparent Ga 2 o 3 The p-i-n heterostructure sun-blind ultraviolet light detector adopts the p-i-n structure to increase the width of the depletion region, which improves the responsivity of the device. Above-mentioned NiO film thickness is 200nm; above-mentioned Ga 2 o 3 The thickness of the film is 250nm; the thickness of the zinc oxide film co-doped with boron and gallium is 100nm; the thickness of the above gold electrode is 70nm.

[0028] A kind of transparent Ga of this embodiment 2 o 3 The structure of the p-i-n heterostructure sun-blind ultraviolet photodetector consists of s...

Embodiment 2

[0043] This embodiment is basically the same as Embodiment 1, especially in that:

[0044] In this example, a transparent Ga 2 o 3 The p-i-n heterostructure sun-blind ultraviolet detector consists of substrate, p-type NiO thin film, i-layer Ga 2 o 3 Thin film, n-type boron, gallium co-doped zinc oxide (BGZO) thin film and Au electrode are stacked and assembled to form a transparent thin film detector structure, and the substrate is made of quartz glass. Transparent Ga 2 o 3 The p-i-n heterostructure sun-blind ultraviolet light detector adopts the p-i-n structure to increase the width of the depletion region, which improves the responsivity of the device. Above-mentioned NiO film thickness is 200nm; above-mentioned Ga 2 o 3 The thickness of the film is 350nm; the thickness of the zinc oxide film co-doped with boron and gallium is 100nm; the thickness of the above gold electrode is 70nm.

[0045] A kind of transparent Ga of this embodiment 2 o 3 The structure of the p-...

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Abstract

The invention discloses a transparent Ga2O3 p-i-n heterostructure solar-blind ultraviolet light detector and a preparation method thereof. A Ga2O3 film is prepared, the structure of the solar-blind ultraviolet light detector is designed, and the detector is formed by stacking and assembling a substrate, a p-type NiO film, an i-layer Ga2O3 film, an n-type boron and gallium co-doped zinc oxide (BGZO) film and an Au electrode. Compared with a commercially used photomultiplier, the detector provided by the invention is simple in structure, excellent in performance, safe, non-toxic and suitable forlarge-scale solar-blind ultraviolet light detectors. Meanwhile, the width of a depletion region is expanded due to the design of the p-i-n type structure, the effective working region of photoelectric conversion is enlarged, and the response speed of the device is increased.

Description

technical field [0001] The invention relates to a p-i-n type ultraviolet photodetector and its preparation method, in particular to a Ga 2 o 3 The thin-film sun-blind ultraviolet light detector and its preparation method are applied in the field of manufacturing technology of inorganic non-metallic material electronic devices. Background technique [0002] Ultraviolet (UV) photodetectors have numerous civilian and military applications, such as biological / chemical analysis, flame sensing, covert air-to-air communications, missile tracking, and environmental detection. Since the ozone and water vapor particles in the atmosphere have a strong absorption of deep ultraviolet light, solar radiation with a wavelength shorter than 280nm hardly exists on the earth's surface, so this section of light is called the solar blind zone. Due to the low natural background in the sun-blind zone, photodetectors operating in this spectral range have the advantages of high signal-to-noise rat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/105H01L31/18
CPCH01L31/032H01L31/105H01L31/18Y02P70/50
Inventor 黄健尚艺陈卓睿别佳瑛黄浩斐唐可王林军
Owner SHANGHAI UNIV
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