Growth method of light-emitting diode epitaxial wafer

Abstract

The invention provides a growth method of a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growth method comprises the following steps: providing a substrate; sequentially growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron blocking layer, a low-temperature P-type layer and a high-temperature P-type layer on the substrate; after the high-temperature P-type layer completely grows, pretreating the surface of the high-temperature P-type layer, and forming a roughened surface on thehigh-temperature P-type layer; forming an MgN island-shaped object on the roughened surface of the high-temperature P-type layer; and growing a P-type GaN filling and leveling layer on the MgN island-shaped object. According to the growth method, a two-layer coarsened structure can be formed, the total reflection of photons between the high-temperature P-type layer and the air interface is reduced, and the light extraction efficiency of the high-temperature P-type layer is improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a method for growing an epitaxial wafer of a light emitting diode. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] The epitaxial wafer is the primary product in the LED manufacturing process. In related technologies, LED epitaxial wafers include a substrate and a low-temperature buffer layer, a transition layer, a high-temperature buffer layer and an N-type layer, an active layer, an electron b...

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Problems solved by technology

[0004] However, the high-temperature P-type GaN layer will also absorb part of the light, resulting in a decrease in the light-extraction efficiency of the epitaxial wafer.

At the same time, due to the small critical angle of total reflection of the GaN material (usually 24.5°), holes and electrons radiate and recombine in the active layer, and part of the photons generated will be incident on the high-temperature P-type layer and the air at an angle exceeding 24.5°. Interface, total reflection occurs, causing part of the incident photons to be reflected back into the epitaxial wafer, and finally absorbed by the GaN material in the epitaxial wafer, thereby further reducing the light extraction efficiency of the epitaxial wafer, resulting in low external quantum efficiency of the LED

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