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Saturable absorber based on two-dimensional black arsenic-phosphorus nano material, preparation method thereof and laser

A black arsenic and phosphorus nanometer and saturable absorption technology, which is applied in lasers, laser components, nanotechnology for materials and surface science, etc., can solve the problem that lasers cannot cover the mid-infrared band, and achieve high stability and wide The effect of tunable bandgap and high carrier mobility

Inactive Publication Date: 2020-12-29
SHENZHEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a saturable absorber based on two-dimensional black arsenic and phosphorus nanomaterials, and the present invention also provides a preparation method of a saturable absorber based on two-dimensional black arsenic and phosphorus nanomaterials, the present invention Also provided is a laser using the aforementioned saturable absorber based on two-dimensional black arsenic and phosphorus nanomaterials to solve the defect that existing lasers cannot cover the mid-infrared band

Method used

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  • Saturable absorber based on two-dimensional black arsenic-phosphorus nano material, preparation method thereof and laser
  • Saturable absorber based on two-dimensional black arsenic-phosphorus nano material, preparation method thereof and laser
  • Saturable absorber based on two-dimensional black arsenic-phosphorus nano material, preparation method thereof and laser

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preparation example Construction

[0037] In the second aspect, the present invention also provides a method for preparing a saturable absorber based on two-dimensional black arsenic and phosphorus nanomaterials, comprising the following steps:

[0038]Provide a two-dimensional black arsenic phosphorus nanomaterial dispersion and an optical waveguide, the optical waveguide is passed through light to generate an evanescent field, and then the two-dimensional black arsenic phosphorus nanomaterial dispersion is coated on the optical waveguide, dried and formed, and manufactured A saturable absorber based on two-dimensional black arsenic and phosphorus nanomaterials was obtained.

[0039] Further, the concentration of the two-dimensional black arsenic and phosphorus nanomaterials in the dispersion liquid of the two-dimensional black arsenic and phosphorus nanomaterials is 5-100 mg / ml.

[0040] Further, the preparation method of the two-dimensional black arsenic phosphorus nanomaterial comprises the following steps:...

Embodiment 1

[0060] Such as figure 1 Shown, a kind of preparation method of two-dimensional black arsenic phosphorus nanomaterial comprises the following steps:

[0061] Preparation of b-AsP crystal: provide 50mg of gray arsenic, 450mg of red phosphorus and 10mg of tin iodide and place them in a sealed vacuum quartz tube, and then place the vacuum quartz tube horizontally in the furnace. First raise the temperature of the vacuum quartz tube to 750 °C at a speed of 5 °C / min and maintain it at this temperature for 2 hours, then cool the vacuum quartz tube to 500 °C within 7.5 hours and maintain it at this temperature for 3 hours, and then within 8 hours. The vacuum quartz tube was cooled to 150°C, and finally gradually cooled to room temperature to obtain b-AsP crystals.

[0062] Preparation of two-dimensional b-AsP nanomaterials: grind b-AsP crystals for 10 min to form powdered b-AsP, then dissolve the ground powdered b-AsP in deionized water to obtain b-AsP dispersion, and mix b-AsP The ...

Embodiment 2

[0067] A saturable absorber based on two-dimensional b-AsP, the specific preparation process includes: using a common single-mode fiber (dispersion 18ps / (nm*km)) to obtain a tapered fiber through a mechanical tapered machine, and then connecting a 980nm The pump laser produces an evanescent field in the tapered region. Then, the dispersion liquid containing the two-dimensional b-AsP nanomaterial obtained in Example 1 was dropped into the tapered region of the optical fiber, and dried to form a saturable absorber based on two-dimensional b-AsP.

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Abstract

The invention provides a saturable absorber based on a two-dimensional black arsenic-phosphorus nano material. The saturable absorber comprises an optical waveguide and a two-dimensional black arsenic-phosphorus nano material layer arranged on the optical waveguide, and the thickness of the two-dimensional black arsenic-phosphorus nano material in the two-dimensional black arsenic-phosphorus nanomaterial layer is less than or equal to 20nm. The saturable absorber based on the two-dimensional black arsenic phosphorus nano material has huge application potential in ultrafast photonics from a near-infrared band to a middle-infrared band, is applied to the field of lasers, and can be used for preparing lasers covering the near-infrared band to the middle-infrared band. The invention also provides a preparation method of the saturable absorber based on the two-dimensional black arsenic-phosphorus nano material and a laser comprising the saturable absorber based on the two-dimensional blackarsenic-phosphorus nano material.

Description

technical field [0001] The present invention relates to the field of laser technology, in particular to a saturable absorber based on a two-dimensional black arsenic and phosphorus nanomaterial, and the invention also relates to a preparation method of the saturable absorber based on a two-dimensional black arsenic and phosphorus nanomaterial and including the Lasers with saturable absorbers of two-dimensional black arsenic and phosphorus nanomaterials. Background technique [0002] At present, the two-dimensional black arsenic-phosphorus nanomaterial (b-AsP) is a new type of two-dimensional binary material based on the V group, which has a wide tunable bandgap, strong conductivity and high carrier mobility, and is A promising electronic and optoelectronic material. In addition, on the basis of previous studies, it was found that b-AsP, as a nonlinear optical material, also has certain advantages in the application of photonic devices. For example, the band gap of b-AsP ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/098H01S3/067C01B25/08B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00C01B25/08C01P2004/20C01P2004/64H01S3/06716H01S3/1118
Inventor 张晗康绿红舒怡青张家宜
Owner SHENZHEN UNIV
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