C/TiN coated lithium tritium orthosilicate breeding agent and preparation method and preparation device system thereof

A technology of a tritium multiplication agent and a coating device, which is applied in the field of nuclear fusion and can solve the problems of difficult mass production, direct contact, low heat transfer, etc.

Active Publication Date: 2021-01-05
中科南京绿色制造产业创新研究院 +1
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AI-Extracted Technical Summary

Problems solved by technology

However, the invention also has the problem that the lithium titanate ceramic balls are in direct contact with the cladding material during use, which is likely to cause corrosion of the cladding material
[0007] CN108550404A discloses a fluid tritium breeding ceramic composite material, the fluid tritium breeding ceramic composite material is formed by mixing liquid and solid phases, which can eliminate existing The magnetohydrodynamic resistance effect of some liquid metal or molten salt tritium breeders and the cor...
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Method used

Thus it can be seen that inert C/TiN film has hindered Li SiO in the present invention The direct contact of tritium multiplier and cladding material fundamentally avoids the diffusion and reaction between Li, O, Fe, Cr elements, significantly The safety of the cladding material is improved; the inert C/TiN film in the present invention hinders the direct contact betwee...
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Abstract

The invention provides a C/TiN coated Li4SiO4 tritium breeding agent and a preparation method and a preparation device system thereof. The preparation method comprises the following steps: (1) enabling Li4SiO4 particles to be in a fluidized state in a protective atmosphere; (2) mixing the Li4SiO4 particles, titanium source gas and nitrogen source gas on the basis that the step (1) is continuouslycarried out to obtain TiN-coated Li4SiO4 particles; (3) mixing the TiN-coated Li4SiO4 particles obtained in the step (2) with carbon source gas on the basis that the step (1) is continuously carried out; and (4) carrying out gas-solid separation to obtain the C/TiN coated Li4SiO4 tritium breeding agent. The device system comprises a stock bin, a fluidized bed coating device, a titanium source gasification device, a product collection device and a tail gas treatment device. According to the preparation method, the corrosion of Li4SiO4 to a cladding material is overcome, and meanwhile, the stability of the lithium-based ceramic tritium breeding agent in a He-H2/H2O environment is improved.

Application Domain

Nuclear energy generationThermonuclear fusion reactor

Technology Topic

Carbon sourceCorrosion +10

Image

  • C/TiN coated lithium tritium orthosilicate breeding agent and preparation method and preparation device system thereof
  • C/TiN coated lithium tritium orthosilicate breeding agent and preparation method and preparation device system thereof
  • C/TiN coated lithium tritium orthosilicate breeding agent and preparation method and preparation device system thereof

Examples

  • Experimental program(5)
  • Comparison scheme(1)

Example Embodiment

[0063]Example 1
[0064]This embodiment provides a C/TiN coated Li4SiO4The preparation method of tritium multiplication agent, the preparation method is provided in the present invention asfigure 1 In the shown device system, the preparation method includes the following steps:
[0065](1) Make spherical Li with a particle size of 0.6mm4SiO4The particles are in a fluidized state in a protective atmosphere of argon;
[0066](2) On the basis of continuing the step (1), the titanium source gas and the nitrogen source gas are separately passed into the Li4SiO4In the protective atmosphere where the particles are located, TiN coated Li is obtained4SiO4Particles; the mixing temperature is 700°C, and the mixing time is 30min; the titanium source gas is the gas formed by the high temperature gasification of titanium dichloride at 600°C, the carrier gas is argon, and the gas velocity is 125mL/min; The nitrogen source gas is nitrogen, and the gas velocity is 125 mL/min;
[0067](3) On the basis of the continuous progress of step (1), the carbon source gas methane is passed into the TiN coated Li4SiO4In the protective atmosphere where the particles are located, the mixing temperature is 700°C, and the mixing time is 30 minutes; the gas flow rate of the carbon source gas is 125 mL/min;
[0068](4) C/TiN coated Li is obtained after gravity sedimentation4SiO4Tritium multiplication agent.
[0069]figure 2 C/TiN coated Li obtained by the preparation method provided in this embodiment4SiO4The EDS chart of the tritium multiplication agent shows that the TiN content reaches 14.6 at.% and the C content reaches 7.8 at.%.
[0070]image 3C/TiN coated Li obtained by the preparation method provided in this embodiment4SiO4SEM image of tritium multiplication agent, byimage 3It can be seen that the surface of the crystal grains of the microspheres is evenly coated with a layer of nano-C/TiN film.

Example Embodiment

[0071]Example 2
[0072]This embodiment provides a C/TiN coated Li4SiO4The preparation method of tritium multiplication agent, the preparation method is provided in the present invention asfigure 1 In the shown device system, the preparation method includes the following steps:
[0073](1) Make a spherical Li with an average particle size of 0.9mm4SiO4The particles are in a fluidized state in a protective atmosphere of helium;
[0074](2) On the basis of continuing the step (1), the titanium source gas and the nitrogen source gas are separately passed into the Li4SiO4In the protective atmosphere where the particles are located, TiN coated Li is obtained4SiO4Particles; the mixing temperature is 800°C, and the mixing time is 45min; the titanium source gas is a gas formed by the high temperature gasification of titanium dichloride at 700°C, the carrier gas is helium, and the gas velocity is 160mL/min; The nitrogen source gas is nitrogen, and the gas velocity is 160 mL/min;
[0075](3) On the basis of the continuous progress of step (1), the carbon source gas ethane is passed into the TiN coated Li4SiO4In the protective atmosphere where the particles are located, the mixing temperature is 800°C, and the mixing time is 45 minutes; the gas flow rate of the carbon source gas is 160 mL/min;
[0076](4) C/TiN coated Li is obtained after centrifugal sedimentation4SiO4Tritium multiplication agent.
[0077]C/TiN coated Li obtained in this example4SiO4The elemental composition and microscopic morphology of the tritium multiplying agent are similar to those in Example 1, so it will not be repeated here.

Example Embodiment

[0078]Example 3
[0079]This embodiment provides a C/TiN coated Li4SiO4The preparation method of tritium multiplication agent, the preparation method is provided in the present invention asfigure 1 In the shown device system, the preparation method includes the following steps:
[0080](1) Make spherical Li with a particle size of 0.3mm4SiO4The particles are in a fluidized state in a protective atmosphere of neon gas;
[0081](2) On the basis of continuing the step (1), the titanium source gas and the nitrogen source gas are separately passed into the Li4SiO4In the protective atmosphere where the particles are located, TiN coated Li is obtained4SiO4Particles; the mixing temperature is 600°C, and the mixing time is 15min; the titanium source gas is a gas formed by the gasification of titanium dichloride at a high temperature of 500°C, the carrier gas is neon gas, and the gas velocity is 85mL/min; The nitrogen source gas is nitrogen, and the gas velocity is 85 mL/min;
[0082](3) On the basis of continuing step (1), the carbon source gas ethylene is passed into the TiN coated Li4SiO4In the protective atmosphere where the particles are located, the mixing temperature is 600°C, and the mixing time is 15 minutes; the gas flow rate of the carbon source gas is 85 mL/min;
[0083](4) C/TiN coated Li is obtained after filtration4SiO4Tritium multiplication agent.
[0084]C/TiN coated Li obtained in this example4SiO4The elemental composition and microscopic morphology of the tritium multiplying agent are similar to those in Example 1, so it will not be repeated here.

PUM

PropertyMeasurementUnit
Equivalent diameter0.1 ~ 1.2mm

Description & Claims & Application Information

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