A method and system for evaluating the noise of a sic heterostructure microwave diode

Abstract

The present invention provides a method and system for evaluating the noise of SiC heterostructure microwave diodes, including obtaining SiC heterostructure microwave diodes to be tested, and selecting corresponding noise influencing factors, including ionization avalanche effect, field-induced tunneling effect and quantum effect ; Correct the continuity equation, current density equation and Poisson equation of the SiC heterogeneous junction microwave diode to be tested; perform space and time two-dimensional gridding on the SiC heterogeneous junction microwave diode to be tested, so that the revised continuity equation, current density Equations and Poisson equations are discretized into equations; solve the discretized equations to obtain the structure, steady-state performance and AC performance parameter values; build a noise model composed of noise electric field intensity functions and boundary conditions; combine the structure, steady-state performance and The AC performance parameter values ​​are imported into the noise model and boundary conditions for double iterative calculation, and the noise parameter values ​​of the SiC heterostructure microwave diode to be tested are obtained. The invention can improve the noise detection accuracy of the SiC heterostructure microwave diode.

Description

technical field [0001] The invention relates to the technical field of diode detection, in particular to an evaluation method for SiC heterostructure microwave diode noise. Background technique [0002] Impact Ionization Avalanche Transit Time (IMPATT) diodes and Mixed Tunneling Avalanche Transit Time (MITATT) diodes are two-terminal solid-state power sources with simple structure and high efficiency. The heterostructure composed of wide bandgap semiconductor SiC with the same chemical composition but different structure has the advantages of basic lattice matching and no mutual diffusion pollution. The two-dimensional electron gas (2DEG) at the SiC heterojunction interface has demonstrated important research and application values ​​[Electronic properties of a 3C / 4H SiC polytype heterojunction formed on the Si face, Applied Physics Letters, 2007,90(17):173509-1 -4.; Quantum confinement and coherence in a two-dimensionalelectron gas in a carbon-face 3C-SiC / 6H-SiC polytype h...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the embodiments of the present invention is to provide a method and system for evaluating the noise of SiC heterostructure microwave diodes, which can overcome the low detection accuracy and large error of the existing technology for SiC, GaN and other heterostructure microwave diode noise detection. question

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