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A method and system for evaluating the noise of a sic heterostructure microwave diode

An evaluation method and diode technology, applied in CAD numerical modeling, instrumentation, calculation, etc., can solve the problems of low noise detection accuracy and large error of heterogeneous junction microwave diodes

Active Publication Date: 2021-07-13
WENZHOU UNIV
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Problems solved by technology

[0006] The technical problem to be solved by the embodiments of the present invention is to provide a method and system for evaluating the noise of SiC heterostructure microwave diodes, which can overcome the low detection accuracy and large error of the existing technology for SiC, GaN and other heterostructure microwave diode noise detection. question

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  • A method and system for evaluating the noise of a sic heterostructure microwave diode

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Embodiment Construction

[0039] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings.

[0040] like figure 1 As shown, in the embodiment of the present invention, a method for evaluating the noise of a SiC heterostructure microwave diode provided includes the following steps:

[0041] S1. Obtain the SiC heterostructure microwave diode to be tested working in the THz band, and make corresponding selections among the noise influencing factors including ionization avalanche effect, quantum effect and field-induced tunneling effect, and obtain the SiC heterostructure microwave diode to be tested The preset continuity equation, current density equation and Poisson equation are corrected; among them, the SiC heterostructure microwave diode to be tested is a SiC heterostructure impact ionization avalanche transit time (IMPATT) diode or a hybrid tunneling...

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Abstract

The present invention provides a method and system for evaluating the noise of SiC heterostructure microwave diodes, including obtaining SiC heterostructure microwave diodes to be tested, and selecting corresponding noise influencing factors, including ionization avalanche effect, field-induced tunneling effect and quantum effect ; Correct the continuity equation, current density equation and Poisson equation of the SiC heterogeneous junction microwave diode to be tested; perform space and time two-dimensional gridding on the SiC heterogeneous junction microwave diode to be tested, so that the revised continuity equation, current density Equations and Poisson equations are discretized into equations; solve the discretized equations to obtain the structure, steady-state performance and AC performance parameter values; build a noise model composed of noise electric field intensity functions and boundary conditions; combine the structure, steady-state performance and The AC performance parameter values ​​are imported into the noise model and boundary conditions for double iterative calculation, and the noise parameter values ​​of the SiC heterostructure microwave diode to be tested are obtained. The invention can improve the noise detection accuracy of the SiC heterostructure microwave diode.

Description

technical field [0001] The invention relates to the technical field of diode detection, in particular to an evaluation method for SiC heterostructure microwave diode noise. Background technique [0002] Impact Ionization Avalanche Transit Time (IMPATT) diodes and Mixed Tunneling Avalanche Transit Time (MITATT) diodes are two-terminal solid-state power sources with simple structure and high efficiency. The heterostructure composed of wide bandgap semiconductor SiC with the same chemical composition but different structure has the advantages of basic lattice matching and no mutual diffusion pollution. The two-dimensional electron gas (2DEG) at the SiC heterojunction interface has demonstrated important research and application values ​​[Electronic properties of a 3C / 4H SiC polytype heterojunction formed on the Si face, Applied Physics Letters, 2007,90(17):173509-1 -4.; Quantum confinement and coherence in a two-dimensionalelectron gas in a carbon-face 3C-SiC / 6H-SiC polytype h...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/373G06F111/10G06F119/10
CPCG06F30/373G06F2111/10G06F2119/10
Inventor 韦文生莫越达白凯伦
Owner WENZHOU UNIV
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