Method and system for evaluating noise of SiC heterojunction microwave diode

Abstract

The invention provides a method and system for evaluating the noise of an SiC heterojunction microwave diode, and the method comprises the steps: obtaining a to-be-tested SiC heterojunction microwavediode, and selecting corresponding noise influence factors which comprise an ionization avalanche effect, a field tunneling effect and a quantum effect; correcting a continuity equation, a current density equation and a Poisson equation of the SiC heterojunction microwave diode to be measured; carrying out space and time two-dimensional meshing on the SiC heterojunction microwave diode to be measured, and discretizing the corrected continuity equation, current density equation and Poisson equation into an equation set; solving the discretized equation set to obtain structure, steady-state performance and alternating-current performance parameter values; constructing a noise model composed of a noise electric field intensity function and boundary conditions; and importing the structure, steady-state performance and alternating-current performance parameter values into the noise model and the boundary condition for double iterative computation to obtain a noise parameter value of the SiCheterojunction microwave diode to be measured. According to the invention, the noise detection precision of the SiC heterojunction microwave diode can be improved.

Description

technical field [0001] The invention relates to the technical field of diode detection, in particular to an evaluation method for SiC heterostructure microwave diode noise. Background technique [0002] Impact Ionization Avalanche Transit Time (IMPATT) diodes and Mixed Tunneling Avalanche Transit Time (MITATT) diodes are two-terminal solid-state power sources with simple structure and high efficiency. The heterostructure composed of wide bandgap semiconductor SiC with the same chemical composition but different structure has the advantages of basic lattice matching and no mutual diffusion pollution. The two-dimensional electron gas (2DEG) at the SiC heterojunction interface has demonstrated important research and application values ​​[Electronic properties of a 3C / 4H SiC polytype heterojunction formed on the Si face, Applied Physics Letters, 2007,90(17):173509-1 -4.; Quantum confinement and coherence in a two-dimensionalelectron gas in a carbon-face 3C-SiC / 6H-SiC polytype h...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the embodiments of the present invention is to provide a method and system for evaluating the noise of SiC heterostructure microwave diodes, which can overcome the low detection accuracy and large error of the existing technology for SiC, GaN and other heterostructure microwave diode noise detection. question

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