32 results about "Microwave diodes" patented technology

The invention discloses a WIFI (wireless fidelity) mobile terminal plane antenna and relates to a plane antenna. The antenna comprises a medium substrate. One side of the medium substrate is provided with a microstrip line I and a second order tree fractal radiation arm I. The other side of the medium substrate is provided with a ground plate, a microstrip line II and a second order tree fractal radiation arm II. The radiation arms I II form a second order tree fractal dipole radiator. A characteristic impedance of the microstrip lines I II is 50 ohms. A microwave diode I is connected in series to a front end or a rear end of a first branch joint of the radiation arm I. A microwave diode II is connected in series to the front end or the rear end of the first branch joint of the radiation arm II. A microwave diode III is connected in series to the joint of the microstrip line II and the ground plate. The structure of the antenna is changed through controlling on-off states of the three microwave diodes so that the antenna can work in 2.45 and 5.8 GHz frequency ranges. And a radiation pattern of the antenna is changed so that the antenna possesses omnidirectional and directional radiation performance. A volume is small, a structure is simple, cost is low and the performance is good.

The invention discloses a digitized high-power microwave diode reversed dynamic waveform and loss power testing system. The system comprises a low-noise power circuit used for providing direct voltage and applying reverse bias voltage to a diode to be tested, a forward adjustable current source circuit used for providing multiple adjustable forward currents for the diode to be tested, an edge adjustable pulse generating circuit used for providing multiple adjustable pulse modulation signals for the diode to be tested, a reverse dynamic current and voltage waveform testing and peak detection circuit used for acquiring the reverse dynamic current and voltage waveforms and peak signals of the diode to be tested, a dynamic current waveform sampling circuit used for processing the peak signals into analog signals, a C parameter testing circuit used for measuring the ratio of reverse peak voltage to bias voltage, and a central processing unit used for data processing. According to the system, by detecting performance parameters, including the reverse dynamic current, reverse dynamic voltage and loss power, of the diode, the purposes of well selecting and using the diode and improving the reliability of the diode are realized.

The invention belongs to the technical field of strain measurement, relating to a device for measuring dynamic strain. The device comprises a flexible film microwave strain sensor, a dynamic load measurer and a network analyzer, wherein the flexible film microwave strain sensor is a single crystal silicon type microwave diode film; the dynamic load measurer is used for loading a material to be measured; and the network analyzer comprises a microwave swept-frequency signal output end and a receiving input end, the output end and the input end are respectively connected with the anode or the cathode of the flexible film microwave strain sensor, and the network analyzer can internally memorize the data which reflects the relationship between the strain and the S parameter. When the device is used for measuring, the network analyzer realizes the measurement of the dynamic flexible strain by implementing the obtained data of the S parameter variation of the flexible film microwave strain sensor. The invention further provides a measurement method adopting the measurement device. The invention is higher in precision, can realize the self aligning function, and can measure the high-frequency dynamic strain.

The invention discloses an H-shaped electric control beam scanning radome which is formed by using a microwave diode; a copper wire with H-shaped unit structure is painted on the front surface and the back surface of an FR4 dielectric slab and the dielectric slab is painted with n and m unit length respectively horizontally and longitudinally so as to form the double surface symmetrical heterodromous dielectric slab with the number of n multiplied by m, the same H-shaped structure and uniform distribution; the microwave diode is added in the H-shaped structure of each unit, direct current voltage is externally added to each unit of the first line of the upper end of the heterodromous dielectric slab so as to lead the microwave diode in each row of units to have the same direct current bias and all the units in each row are parallel; and the difference of two adjacent rows of added direct current voltage is adjusted to lead the beam running through the two adjacent rows to have the same phase difference so as to realize beam deflection. The capacitance of the diode is controlled by the direct current voltage so as to change the resonance frequency heterodromous medium and achieve the purpose of electric control adjustment of the scanning direction. The invention has simple electric control circuit, good electric control adjustability, uniform structure, small size, light weight, simple manufacture and low cost.

A field emission cathode consisting of atomic-scale composite material comprising three atomic networks is proposed. The first and the second atomic networks penetrate into each other and form carbon-based stabilized dielectric medium and the third atomic network is a conductive network of metallic atoms. The atomic scale composite material may also contain conductive nano-crystals immersed into the carbon-based stabilized dielectric medium. The atomic-scale conductive network and nano-crystals reach the film surface and film edge forming nanometer scale field emission sites. They may be partially exposed by etching the other components of the cathode material thereby forming atomic-scale and / or nano-scale field emission metallic tips.The field emission cathode can be used as an efficient cold cathode in a variety of electronic devices, such as flat panel field emission displays, microwave diodes, triodes and more complex devices.

The invention discloses a high-stable low-loss microwave diode of nanocrystalline embedded single crystal epitaxial silicon carbide and a technique. The structure of the high-stable low-loss microwave diode is: (P+)4H-nc-SiC / [(P-)4H-nc-SiC / (N-)6H-c-SiC] / (N-)6H-c-SiC / [(P+)4H-nc-SiC / (N+)6H-c-SiC]; the high-stable low-loss microwave diode comprises a (P+)4H-nc-SiC / (N+)6H-nc-SiC composite cathode, a (N-)6H-c-SiC base zone, a (P-)4H-nc-SiC / (N-)6H-c-SiC composite transition layer, and a (P+)4H-nc-SiC anode. The high-stable low-loss microwave diode is researched by magnetic control sputtering, RIE (reactive ion etching) and PECVD (plasma enhanced chemical vapor deposition) technologies. The P / N border local area is used up, junction capacity in the appliance is reduced; the diode is applicable to the microwave frequency section; temperature stability and voltage withstanding ability are improved; the reverse process time is shortened and loss is reduced.

A biasing circuit is used to provide low distortion and high efficiency operation of a microwave power amplifier. The biasing circuit utilizes the nonlinear rectified current of a microwave diode or transistor for biasing the amplifying transistor self-adaptively. The biasing current not only reduces the DC bias power during low-power operation and increases self-adaptively during high-power operation, but also manipulates the intermodulation distortion minimum dynamically. Meanwhile, the biasing circuit distorts the input signals with positive gain and negative phase deviations. Therefore, the average power efficiency of the operation is enhanced, the linearity of the input-output characteristic is improved and the radiated level of adjacent channel power is suppressed.

The invention relates to a microwave diode based on a nonlinear electromagnetically induced transparency phenomenon. The microwave diode includes a dielectric plate (4), a first copper foil layer (10) which is located at the bottom surface of the dielectric plate (4), an annular copper foil layer (6) which is arranged at the front surface of the dielectric plate (4), a first copper foil tape (8) which is arranged at the front surface of the dielectric plate (4), and a thin copper foil tape (5) which is arranged at the front surface of the dielectric plate (4); and one end of the thin copper foil tape (5) is vertically connected with the first copper foil tape (8), and the other end of the thin copper foil tape (5) is open circuited. Compared with the prior art, the microwave diode based on the nonlinear electromagnetically induced transparency phenomenon of the invention has the advantages of miniaturization, nondestructive cohesion, simple process, low cost, low threshold value, high contrast and the like.

A biasing circuit is used to provide low distortion and high efficiency operation of a microwave power amplifier. The biasing circuit utilizes the nonlinear rectified current of a microwave diode or transistor for biasing the amplifying transistor self-adaptively. The biasing current not only reduces the DC bias power during low-power operation and increases self-adaptively during high-power operation, but also manipulates the intermodulation distortion minimum dynamically. Meanwhile, the biasing circuit distorts the input signals with positive gain and negative phase deviations. Therefore, the average power efficiency of the operation is enhanced, the linearity of the input-output characteristic is improved and the radiated level of adjacent channel power is suppressed.

The invention belongs to the technical field of strain measurement, and relates to a microwave diode-based dynamic strain measuring device. The microwave diode-based dynamic strain measuring device comprises a flexible film microwave strain sensor, a dynamic load tester and a network analyzer, wherein the flexible film microwave strain sensor is a monocrystalline silicon microwave diode film; the dynamic load tester is used for loading an object to be tested; and the network analyzer comprises a microwave sweep frequency signal output end and a receiving input end, the output end and the input end are respectively connected with an anode or a cathode of a flexible film microwave strain gauge, data which represents the relation of the strain and a parameter S is stored in the network analyzer, and when measuring, the network analyzer realizes the measurement of dynamic flexible strain according to the data of the variation of the parameter S of the flexible film microwave strain sensor acquired by implementation. The microwave diode-based dynamic strain measuring device has higher precision and can realize self-calibration function and measure high-frequency dynamic strain.

The invention discloses a low-turn-on-voltage GaN microwave diode based on low-work-function anode metal and a preparation method thereof, and mainly solves the problem of high turn-on voltage of theGaN microwave diode. The device is performed on an AlGaN / GaN epitaxial wafer. The epitaxial wafer comprises a substrate (1), an epitaxial buffer layer (2), a GaN channel layer (3) and an AlGaN barrierlayer (4) which are arranged from bottom to top. A circular groove (5) is arranged in the channel layer and the barrier layer, and an annular cathode (6) is arranged on the peripheral barrier layer of the groove. A medium (7) is arranged in the region of the AlGaN barrier layer apart from the groove and the cathode. An anode (8) is arranged on the bottom, side walls and edge media of the groove,and the anode is laminated with low work function metal Mo or W and metal Au. The turn-on voltage of the GaN microwave diode can be significantly reduced and the device performance can be improved andthe diode can be widely applied to microwave rectification and microwave limiting.

The method includes the following steps: Agilent86100A wideband samploscope with a double microwave diode balance sampling head circuit is selected as pulse signal generator; plug-in component is installed; the voltage is set in -300mV-50mV or +50mV-+300mV; Agilent86100B wideband samploscope for TDR signal is selected to match the delay of Agilent86100A wideband samploscope; a time domain reflectometer plug-in is installed; the trigger signal of Agilent86100A wideband samploscope is sent out; the signal triggering end of Agilent86100A wideband samploscope is connected to the TDR signal generating end of Agilent86100B wideband samploscope; its cable is connected to the input end of Agilent86100A wideband samploscope; adjusting vertical sensitivity and horizontal sensitivity of Agilent86100A wideband samploscope; setting the offset voltage of Agilent86100A wideband samploscope as zero; adjusting the delay time until Agilent86100A wideband samploscope generates high speed pulse signals. Its equivalent step impulse source has 8ps rise time.

The invention discloses a preparation method of a GaN microwave diode with a floating anode edge, and mainly solves the problems of large capacitance and slow frequency response of a GaN transverse microwave diode. The GaN microwave diode comprises a substrate (1), a GaN buffer layer (2), a GaN channel layer (3) and an AlGaN barrier layer (4) from bottom to top, circular grooves (5) are formed inthe channel layer and the barrier layer, and the annular cathodes (6) are arranged on the peripheral barrier layers of the grooves. The anodes (7) are arranged at the bottoms and on the side walls ofthe grooves and above the edge barrier layers of the grooves, a gap of 80-300 nm is formed between the anode above the edge barrier layer of the groove and the lower barrier layer, and a partial anodefloating structure with the length of 0.3-2 micrometers is formed. The junction capacitance of the GaN microwave diode can be greatly reduced, the frequency response of the device is remarkably improved, and the GaN microwave diode and the method can be widely applied to microwave rectification and microwave amplitude limiting.

The invention discloses an antenna housing for implementing antenna beamwidth switching by using an artificial structure material. The antenna housing consists of two layers of microwave dielectric slabs which are printed with similar H-shaped metal wire structures; the upper-layer microwave dielectric slab is printed with 2n columns and m rows of H-shaped metal wire structures in the horizontal and longitudinal directions, and a microwave diode is arranged in each H-shaped metal wire structure; and the lower-layer microwave dielectric slab is printed with 2n columns and m rows of H-shaped metal wire structures in the horizontal and longitudinal directions, and a microwave diode and a chip resistor are arranged in each H-shaped metal wire structure. The upper-layer and lower-layer microwave dielectric slabs form the integral antenna housing, direct-current voltage is externally applied to the first row of metal wire in each H-shaped metal wire structure in the two layers of microwave dielectric slabs, diodes in each row of units have the same direct-current bias, the units in each row are connected in parallel, and by changing the externally applied direct-current voltage value, electromagnetic waves have high penetration or high absorption property. The antenna housing is loaded above an antenna, the externally applied direct-current voltage distribution is reasonably designed, and the width switching of antenna radiation beams can be realized; and the antenna housing is easy to manufacture and low in cost.

The invention relates to a microwave radiometer wave detector based on an integrated multiplier and a wave detection method thereof. The traditional method using a non-linear area of a diode is replaced to realize the same function. The wave detection method has the advantages that the integrated multiplier has a very large dynamic range, and the temperature drift is very little, so an additional circuit is not needed to adjust the outputted dynamic range and the temperature characteristic of a receiver, and the circuit complexity caused by the diode is greatly reduced; the integrated multiplier is different from the diode, the wave detection output results are kept consistent within the very large temperature range, and the requirement on the working temperature range of a microwave radiometer is also reduced; compared with a microwave diode wave detector, the integrated multiplier usually has higher linearity within the very large temperature range, so that compared with the diode wave detection method, the wave detection linearity is also improved; and the implementing is simple, the reliability is high, and the microwave radiometer wave detector and the wave detection method are suitable for all satellite-borne microwave radiometer wave detection applications, and have broad market application prospect.

A household appliance ( 1 ) e.g a washer-dryer, comprises an enclosure ( 2 ) into which objects to be heated are placed, a magnetron ( 4 ) for generating microwaves, a waveguide ( 3 ) for feeding the generated microwave into the enclosure, an arc detector ( 5 ) coupled to the waveguide ( 3 ) for detecting the arcing within the enclosure ( 2 ) and a control unit ( 6 ).

The invention discloses a preparation method of concave structure monocrystalline graphene. The method comprises the following steps: 1, carrying out ultrasonic cleaning on a copper foil substrate by using acetic acid and acetone, and carrying out pre-annealing treatment; 2, pre-oxidizing the annealed copper foil substrate; and 3, carrying out chemical vapor deposition on the pre-oxidized copper foil through adopting a chemical vapor deposition technology, and cooling the deposited copper foil to obtain the concave structure monocrystalline graphene. The preparation method has the advantages of simplicity, convenience in operation, good repeatability, reparation of the concave (internal single layer and external double layers) structure monocrystalline graphene through controlling reaction atmosphere and low cost, and the concave structure monocrystalline graphene has very good application prospect in the fields of optical and microwave diodes and sensors.

The invention discloses a 4H-SiC PIN diode based on gradient doping of a P region and an I region. The 4H-SiC PIN diode mainly solves the problem that low on-resistance and low junction capacitance cannot be achieved in the prior art. The 4H-SiC PIN diode comprises an n-type substrate (1), an n + layer (2), an i layer (3) and a p + layer (4) from bottom to top, a cathode (5) is arranged on the lower portion of the substrate, an anode (6) is arranged on the upper portion of the p + layer, a passivation layer (7) is arranged on the upper portion of the anode, the i layer (3) is of a multi-layer structure composed of n layers, and all the layers are made of 4H-SiC semiconductor materials with linearly decreasing doping concentration; the p + layer (4) is of a multi-layer structure composed of m layers, and each layer is made of a 4H-SiC semiconductor material with linearly increased doping concentration. According to the invention, low on-resistance and low zero bias capacitance can be realized at the same time, the response speed of the PIN diode can be accelerated, the cut-off frequency is improved, and the PIN diode can be used as a microwave diode to be applied to a microwave amplitude limiting circuit.

The invention provides a dual-band allocation combination apparatus for solving shortcomings in the prior art. The dual-band allocation combination apparatus comprises a metal cover plate and a metal box body, wherein an SMA connector is arranged on each of four walls of the metal box body separately; a microstrip plate is arranged in the metal box body 9; blocking capacitors, microwave diodes, conduction bands and resistors are arranged on the microstrip plate; the blocking capacitors, the microwave diodes, the conduction bands and the resistors are connected together through the conduction bands; and the microstrip plate and the SMA connectors are connected together through the conduction bands. The dual-band allocation combination apparatus has the advantages as follows: external-connecting ports of a microwave digital assembly are reduced and the usage amount of radio-frequency cables in radar or a communication system is reduced, thereby improving the reliability of the microwave digital assembly.

The invention belongs to the technical field of strain measurement, and relates to a microwave diode-based dynamic strain measuring device. The microwave diode-based dynamic strain measuring device comprises a flexible film microwave strain sensor, a dynamic load tester and a network analyzer, wherein the flexible film microwave strain sensor is a monocrystalline silicon microwave diode film; thedynamic load tester is used for loading an object to be tested; and the network analyzer comprises a microwave sweep frequency signal output end and a receiving input end, the output end and the input end are respectively connected with an anode or a cathode of a flexible film microwave strain gauge, data which represents the relation of the strain and a parameter S is stored in the network analyzer, and when measuring, the network analyzer realizes the measurement of dynamic flexible strain according to the data of the variation of the parameter S of the flexible film microwave strain sensoracquired by implementation. The microwave diode-based dynamic strain measuring device has higher precision and can realize self-calibration function and measure high-frequency dynamic strain.

The present invention provides a method and system for evaluating the noise of SiC heterostructure microwave diodes, including obtaining SiC heterostructure microwave diodes to be tested, and selecting corresponding noise influencing factors, including ionization avalanche effect, field-induced tunneling effect and quantum effect ; Correct the continuity equation, current density equation and Poisson equation of the SiC heterogeneous junction microwave diode to be tested; perform space and time two-dimensional gridding on the SiC heterogeneous junction microwave diode to be tested, so that the revised continuity equation, current density Equations and Poisson equations are discretized into equations; solve the discretized equations to obtain the structure, steady-state performance and AC performance parameter values; build a noise model composed of noise electric field intensity functions and boundary conditions; combine the structure, steady-state performance and The AC performance parameter values ​​are imported into the noise model and boundary conditions for double iterative calculation, and the noise parameter values ​​of the SiC heterostructure microwave diode to be tested are obtained. The invention can improve the noise detection accuracy of the SiC heterostructure microwave diode.

The invention provides a dual-band allocation combination apparatus for solving shortcomings in the prior art. The dual-band allocation combination apparatus comprises a metal cover plate and a metal box body, wherein an SMA connector is arranged on each of four walls of the metal box body separately; a microstrip plate is arranged in the metal box body 9; blocking capacitors, microwave diodes, conduction bands and resistors are arranged on the microstrip plate; the blocking capacitors, the microwave diodes, the conduction bands and the resistors are connected together through the conduction bands; and the microstrip plate and the SMA connectors are connected together through the conduction bands. The dual-band allocation combination apparatus has the advantages as follows: external-connecting ports of a microwave digital assembly are reduced and the usage amount of radio-frequency cables in radar or a communication system is reduced, thereby improving the reliability of the microwave digital assembly.

The invention discloses a dual-frequency diffraction antenna capable of independently scanning beams. The antenna comprises a feed source, a microwave dielectric plate having a sub-wavelength thickness and a plurality of periodic units arranged on the microwave dielectric plate, wherein each periodic unit comprises two H-shaped artificial subunit structures having different sizes. The H-shaped artificial subunit structure mainly consists of an interdigital metal electrode, two H-shaped metal electrodes respectively connected to two sides of the interdigital metal electrode and an electronic speed controller microwave diode arranged in the interdigital metal electrode; and the two H-shaped artificial subunit structures are individually adjustable electrical resonant structures with respective resonant frequency and transparent frequency. According to the special dispersion phenomenon of the artificial surface, the invention realizes a dual-frequency diffraction antenna capable of independently scanning beams, which has the advantages of simple structure, low cost and the like.

The invention discloses a preparation method of concave structure monocrystalline graphene. The method comprises the following steps: 1, carrying out ultrasonic cleaning on a copper foil substrate by using acetic acid and acetone, and carrying out pre-annealing treatment; 2, pre-oxidizing the annealed copper foil substrate; and 3, carrying out chemical vapor deposition on the pre-oxidized copper foil through adopting a chemical vapor deposition technology, and cooling the deposited copper foil to obtain the concave structure monocrystalline graphene. The preparation method has the advantages of simplicity, convenience in operation, good repeatability, reparation of the concave (internal single layer and external double layers) structure monocrystalline graphene through controlling reaction atmosphere and low cost, and the concave structure monocrystalline graphene has very good application prospect in the fields of optical and microwave diodes and sensors.

The invention discloses a high-stability and low-loss microwave diode and a process for embedding nanocrystals in single-crystal epitaxial silicon carbide. The structure is (P+)4H-nc-SiC / [(P-)4H-nc-SiC / (N-)6H-c-SiC] / (N-)6H-c-SiC / [(P+)4H-nc -SiC / (N+)6H-c-SiC], including (P+)4H-nc-SiC / (N+)6H-c-SiC composite cathode, (N-)6H-c-SiC base, (P-) 4H-nc-SiC / (N-)6H-c-SiC composite transition layer, (P+)4H-nc-SiC anode. Developed by magnetron sputtering, RIE and PECVD techniques. The P / N junction is locally depleted, the internal junction capacitance of the device is reduced, it is suitable for microwave frequency bands, the temperature stability and withstand voltage capability are improved, the reverse process time is shortened, and the loss is reduced.

The invention relates to the field of microwave frequency synthesis, in particular to a fourth harmonic mixer circuit applied to mercury ion microwave frequency standards, which includes a low-pass filter, a first band-pass filter, a diode pair matching circuit and a second band-pass filter. A pass filter, the output ends of the low pass filter and the first band pass filter are connected to the diode pair matching circuit, and the output end of the diode pair matching circuit is connected to the second band pass filter. This circuit utilizes the nonlinear effect of the microwave diode pair X1. When the low-pass filter and the first band-pass filter input the microwave signal into the matching circuit of the diode pair, various harmonics will be generated, and the matching circuit of the diode pair X1 is Other harmonic components are suppressed to make the output power of the useful signal component larger, and finally the useful signal component is filtered and output by the second band-pass filter to achieve the effect of synthesizing a 9.875GHz microwave signal and a 1GHz microwave signal into a 40.5GHz microwave signal Purpose.

The invention discloses a preparation method of a GaN microwave diode with a floating anode edge, and mainly solves the problems of large capacitance and slow frequency response of a GaN transverse microwave diode. The GaN microwave diode comprises a substrate (1), a GaN buffer layer (2), a GaN channel layer (3) and an AlGaN barrier layer (4) from bottom to top, circular grooves (5) are formed inthe channel layer and the barrier layer, and the annular cathodes (6) are arranged on the peripheral barrier layers of the grooves. The anodes (7) are arranged at the bottoms and on the side walls ofthe grooves and above the edge barrier layers of the grooves, a gap of 80-300 nm is formed between the anode above the edge barrier layer of the groove and the lower barrier layer, and a partial anodefloating structure with the length of 0.3-2 micrometers is formed. The junction capacitance of the GaN microwave diode can be greatly reduced, the frequency response of the device is remarkably improved, and the GaN microwave diode and the method can be widely applied to microwave rectification and microwave amplitude limiting.

The invention relates to a microwave diode based on nonlinear electromagnetic induction transparency phenomenon, comprising: a dielectric board (4); a first copper foil layer (10), which is arranged on the bottom surface of the dielectric board (4); an annular copper foil layer (6) , set on the front of the dielectric plate (4); the first copper foil strip (8), set on the front of the medium plate (4); thin-wire copper foil strip (5), set on the front of the medium plate (4), with one end connected to the first The copper foil strip (8) is vertically connected, and the other end is open. Compared with the prior art, the present invention has the advantages of miniaturization, non-destructive connection, simple process, low cost, low threshold, high contrast and the like.

The invention discloses an antenna housing for implementing antenna beamwidth switching by using an artificial structure material. The antenna housing consists of two layers of microwave dielectric slabs which are printed with similar H-shaped metal wire structures; the upper-layer microwave dielectric slab is printed with 2n columns and m rows of H-shaped metal wire structures in the horizontal and longitudinal directions, and a microwave diode is arranged in each H-shaped metal wire structure; and the lower-layer microwave dielectric slab is printed with 2n columns and m rows of H-shaped metal wire structures in the horizontal and longitudinal directions, and a microwave diode and a chip resistor are arranged in each H-shaped metal wire structure. The upper-layer and lower-layer microwave dielectric slabs form the integral antenna housing, direct-current voltage is externally applied to the first row of metal wire in each H-shaped metal wire structure in the two layers of microwave dielectric slabs, diodes in each row of units have the same direct-current bias, the units in each row are connected in parallel, and by changing the externally applied direct-current voltage value, electromagnetic waves have high penetration or high absorption property. The antenna housing is loaded above an antenna, the externally applied direct-current voltage distribution is reasonably designed, and the width switching of antenna radiation beams can be realized; and the antenna housing is easy to manufacture and low in cost.