32 results about "Microwave diodes" patented technology

The invention belongs to the technical field of strain measurement, and relates to a microwave diode-based dynamic strain measuring device. The microwave diode-based dynamic strain measuring device comprises a flexible film microwave strain sensor, a dynamic load tester and a network analyzer, wherein the flexible film microwave strain sensor is a monocrystalline silicon microwave diode film; thedynamic load tester is used for loading an object to be tested; and the network analyzer comprises a microwave sweep frequency signal output end and a receiving input end, the output end and the input end are respectively connected with an anode or a cathode of a flexible film microwave strain gauge, data which represents the relation of the strain and a parameter S is stored in the network analyzer, and when measuring, the network analyzer realizes the measurement of dynamic flexible strain according to the data of the variation of the parameter S of the flexible film microwave strain sensoracquired by implementation. The microwave diode-based dynamic strain measuring device has higher precision and can realize self-calibration function and measure high-frequency dynamic strain.

The present invention provides a method and system for evaluating the noise of SiC heterostructure microwave diodes, including obtaining SiC heterostructure microwave diodes to be tested, and selecting corresponding noise influencing factors, including ionization avalanche effect, field-induced tunneling effect and quantum effect ; Correct the continuity equation, current density equation and Poisson equation of the SiC heterogeneous junction microwave diode to be tested; perform space and time two-dimensional gridding on the SiC heterogeneous junction microwave diode to be tested, so that the revised continuity equation, current density Equations and Poisson equations are discretized into equations; solve the discretized equations to obtain the structure, steady-state performance and AC performance parameter values; build a noise model composed of noise electric field intensity functions and boundary conditions; combine the structure, steady-state performance and The AC performance parameter values ​​are imported into the noise model and boundary conditions for double iterative calculation, and the noise parameter values ​​of the SiC heterostructure microwave diode to be tested are obtained. The invention can improve the noise detection accuracy of the SiC heterostructure microwave diode.

The invention discloses a low-turn-on-voltage GaN microwave diode based on low-work-function anode metal and a preparation method thereof, and mainly solves the problem of high turn-on voltage of theGaN microwave diode. The device is performed on an AlGaN / GaN epitaxial wafer. The epitaxial wafer comprises a substrate (1), an epitaxial buffer layer (2), a GaN channel layer (3) and an AlGaN barrierlayer (4) which are arranged from bottom to top. A circular groove (5) is arranged in the channel layer and the barrier layer, and an annular cathode (6) is arranged on the peripheral barrier layer of the groove. A medium (7) is arranged in the region of the AlGaN barrier layer apart from the groove and the cathode. An anode (8) is arranged on the bottom, side walls and edge media of the groove,and the anode is laminated with low work function metal Mo or W and metal Au. The turn-on voltage of the GaN microwave diode can be significantly reduced and the device performance can be improved andthe diode can be widely applied to microwave rectification and microwave limiting.

The invention discloses a preparation method of concave structure monocrystalline graphene. The method comprises the following steps: 1, carrying out ultrasonic cleaning on a copper foil substrate by using acetic acid and acetone, and carrying out pre-annealing treatment; 2, pre-oxidizing the annealed copper foil substrate; and 3, carrying out chemical vapor deposition on the pre-oxidized copper foil through adopting a chemical vapor deposition technology, and cooling the deposited copper foil to obtain the concave structure monocrystalline graphene. The preparation method has the advantages of simplicity, convenience in operation, good repeatability, reparation of the concave (internal single layer and external double layers) structure monocrystalline graphene through controlling reaction atmosphere and low cost, and the concave structure monocrystalline graphene has very good application prospect in the fields of optical and microwave diodes and sensors.

The invention discloses a high-stability and low-loss microwave diode and a process for embedding nanocrystals in single-crystal epitaxial silicon carbide. The structure is (P+)4H-nc-SiC / [(P-)4H-nc-SiC / (N-)6H-c-SiC] / (N-)6H-c-SiC / [(P+)4H-nc -SiC / (N+)6H-c-SiC], including (P+)4H-nc-SiC / (N+)6H-c-SiC composite cathode, (N-)6H-c-SiC base, (P-) 4H-nc-SiC / (N-)6H-c-SiC composite transition layer, (P+)4H-nc-SiC anode. Developed by magnetron sputtering, RIE and PECVD techniques. The P / N junction is locally depleted, the internal junction capacitance of the device is reduced, it is suitable for microwave frequency bands, the temperature stability and withstand voltage capability are improved, the reverse process time is shortened, and the loss is reduced.

The invention relates to the field of microwave frequency synthesis, in particular to a fourth harmonic mixer circuit applied to mercury ion microwave frequency standards, which includes a low-pass filter, a first band-pass filter, a diode pair matching circuit and a second band-pass filter. A pass filter, the output ends of the low pass filter and the first band pass filter are connected to the diode pair matching circuit, and the output end of the diode pair matching circuit is connected to the second band pass filter. This circuit utilizes the nonlinear effect of the microwave diode pair X1. When the low-pass filter and the first band-pass filter input the microwave signal into the matching circuit of the diode pair, various harmonics will be generated, and the matching circuit of the diode pair X1 is Other harmonic components are suppressed to make the output power of the useful signal component larger, and finally the useful signal component is filtered and output by the second band-pass filter to achieve the effect of synthesizing a 9.875GHz microwave signal and a 1GHz microwave signal into a 40.5GHz microwave signal Purpose.

The invention relates to a microwave diode based on nonlinear electromagnetic induction transparency phenomenon, comprising: a dielectric board (4); a first copper foil layer (10), which is arranged on the bottom surface of the dielectric board (4); an annular copper foil layer (6) , set on the front of the dielectric plate (4); the first copper foil strip (8), set on the front of the medium plate (4); thin-wire copper foil strip (5), set on the front of the medium plate (4), with one end connected to the first The copper foil strip (8) is vertically connected, and the other end is open. Compared with the prior art, the present invention has the advantages of miniaturization, non-destructive connection, simple process, low cost, low threshold, high contrast and the like.