High stability and low loss microwave diodes embedded in single crystal epitaxial silicon carbide with nanocrystals

A technology of epitaxial silicon carbide and single crystal silicon carbide, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., to achieve the effects of high temperature stability, reduced junction capacitance, and stable thermionic emission mechanism

Active Publication Date: 2016-03-30
宁波致鼎新材料科技有限公司
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  • Abstract
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Problems solved by technology

[0008] So far, there is no report on the preparation of SiC diodes by P / N type alternating local depletion technology

Method used

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  • High stability and low loss microwave diodes embedded in single crystal epitaxial silicon carbide with nanocrystals
  • High stability and low loss microwave diodes embedded in single crystal epitaxial silicon carbide with nanocrystals
  • High stability and low loss microwave diodes embedded in single crystal epitaxial silicon carbide with nanocrystals

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Embodiment Construction

[0043] The present invention is specifically described below by the embodiment, only for further illustrating the present invention, can not be interpreted as the limitation of protection scope of the present invention, the technical engineer of this field can make some non-essential improvements and improvements to the present invention according to the content of the above-mentioned invention Adjustment.

[0044] a) Select N + / N - Type epitaxial single crystal 4H-SiC substrate. Choose a thickness of 50-250 μm and a carrier concentration of about 5.0×10 13 ——5.0×10 14 cm -3 N - Type 6H-c-SiC is the base layer (2), and epitaxial N on one side + Type 6H-c-SiC (1′) is the cathode layer substrate, in which the majority carriers are electrons with a concentration of about 1.0×10 18 ——1.0×10 19 cm -3 . The epitaxial thickness of the cathode layer substrate is 1-2μm, and the N + / N - Epitaxial wafers are polished on both sides, the surface deviates from the (000...

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Abstract

The invention discloses a high-stability and low-loss microwave diode and a process for embedding nanocrystals in single-crystal epitaxial silicon carbide. The structure is (P+)4H-nc-SiC / [(P-)4H-nc-SiC / (N-)6H-c-SiC] / (N-)6H-c-SiC / [(P+)4H-nc -SiC / (N+)6H-c-SiC], including (P+)4H-nc-SiC / (N+)6H-c-SiC composite cathode, (N-)6H-c-SiC base, (P-) 4H-nc-SiC / (N-)6H-c-SiC composite transition layer, (P+)4H-nc-SiC anode. Developed by magnetron sputtering, RIE and PECVD techniques. The P / N junction is locally depleted, the internal junction capacitance of the device is reduced, it is suitable for microwave frequency bands, the temperature stability and withstand voltage capability are improved, the reverse process time is shortened, and the loss is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor microwave devices, and specifically refers to a microwave diode with high stability and low loss in which nanocrystals are embedded in single crystal epitaxial silicon carbide. Background technique [0002] Crystalline silicon carbide (SiC) has the advantages of large band gap, high critical breakdown field strength, high thermal conductivity, large ratio of electron mobility to hole mobility, high hardness, oxidation resistance and corrosion resistance, etc. High-temperature, high-frequency, high-power and radiation-resistant devices have great potential for wide bandgap semiconductor materials. In power systems, a good rectifier device should have characteristics such as small on-resistance, low leakage current, high breakdown voltage, and extremely fast switching speed, so SiC diodes become candidate devices. [0003] Communication equipment such as radar urgently needs low-loss high-frequency mic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/04H01L21/329
CPCH01L29/045H01L29/1608H01L29/66136H01L29/861H01L29/8613
Inventor 韦文生
Owner 宁波致鼎新材料科技有限公司
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