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Concave structure monocrystalline graphene and preparation method thereof

A technology of single crystal graphene and concave shape, which is applied in the field of controllable preparation of single crystal graphene, can solve problems such as high cost, and achieve the effects of low cost, simple preparation method and good application prospects

Active Publication Date: 2017-05-24
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the graphene with the target structure obtained by photolithography needs to go through steps such as spin coating, mask making, photolithography, and adhesive removal, which is very expensive.

Method used

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  • Concave structure monocrystalline graphene and preparation method thereof
  • Concave structure monocrystalline graphene and preparation method thereof
  • Concave structure monocrystalline graphene and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A method for preparing single crystal graphene with a concave structure includes the following steps:

[0025] 1) Cut the copper foil with an area of ​​2cm×2cm, and use acetic acid (purity of 99.5% by weight) and acetone (concentration of 99.5% by weight) to ultrasonically clean the copper foil for 20 minutes; put the cleaned copper foil into a quartz tube. The diameter of the tube is 6cm, the length is 100cm, and 500sccm of Ar is passed into it, and it is kept for 30min to ensure that the air in the quartz tube is exhausted, and then 50sccm of H is passed into it at the same time 2 ,Raise to 1050℃ at a rate of 15℃ / min, keep for 90min (annealing), turn off H 2 ;

[0026] 2) Maintain the Ar gas flow in step 1) to exhaust the H in the quartz tube 2 , Then enter the O of 3sccm 2 Carry out pre-oxidation treatment, keep for 5min, oxidation temperature is 1050℃, close O 2 ; Keep the flow of Ar in step 2) unchanged, H 2 The flow rate is increased to 300sccm, and 1sccm CH 4 , Carry o...

Embodiment 2

[0031] A method for preparing single crystal graphene with a concave structure includes the following steps:

[0032] 1) Cut the copper foil with an area of ​​2cm×2cm, and use acetic acid (purity of 99.5wt%) and acetone (concentration of 99.5wt%) to ultrasonically clean the copper foil for 30 minutes; put the cleaned copper foil into a quartz tube. The diameter of the tube is 6cm, the length is 100cm, and 750sccm of Ar is passed into it, and kept for 30min, to ensure that the air in the quartz tube is exhausted, and then 75sccm of H is passed into it at the same time 2 ,Raise to 1065℃ at a rate of 15℃ / min, keep it for 100min, turn off H 2 (annealing);

[0033] 2) Keep the Ar gas flow in step 1) exhausting H in the quartz tube 2 , Then enter the O of 4sccm 2 , Keep for 7min, oxidation temperature 1065℃, close O 2 ; Keep the flow of Ar in step 2) unchanged, H 2 The flow rate is increased to 400sccm, and 1.2sccm CH 4 , Carry out chemical vapor deposition at a temperature of 1065℃, and ...

Embodiment 3

[0037] A method for preparing single crystal graphene with a concave structure includes the following steps:

[0038] 1) Cut the copper foil with an area of ​​2cm×2cm, and use acetic acid (purity of 99.5% by weight) and acetone (concentration of 99.5% by weight) to ultrasonically clean the copper foil for 40 minutes; put the cleaned copper foil into a quartz tube. The diameter of the tube is 6cm, the length is 100cm, and 1000sccm of Ar is passed into it, and kept for 30min to ensure that the air in the quartz tube is exhausted, and then 100sccm of H is passed into it at the same time 2 , Rise to 1080°C at a rate of 15°C / min, keep it for 120min (annealing), turn off H 2 ;

[0039] 2) Keep the Ar gas flow in step 1) exhausting H in the quartz tube 2 , Then enter 5sccm O 2 Carry out pre-oxidation treatment, keep for 10 minutes, the oxidation temperature is 1080 ℃, close O 2 ; Keep the flow of Ar in step 2) unchanged, H 2 The flow rate is increased to 500sccm, and 1.5sccm CH 4 , Carry o...

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PUM

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Abstract

The invention discloses a preparation method of concave structure monocrystalline graphene. The method comprises the following steps: 1, carrying out ultrasonic cleaning on a copper foil substrate by using acetic acid and acetone, and carrying out pre-annealing treatment; 2, pre-oxidizing the annealed copper foil substrate; and 3, carrying out chemical vapor deposition on the pre-oxidized copper foil through adopting a chemical vapor deposition technology, and cooling the deposited copper foil to obtain the concave structure monocrystalline graphene. The preparation method has the advantages of simplicity, convenience in operation, good repeatability, reparation of the concave (internal single layer and external double layers) structure monocrystalline graphene through controlling reaction atmosphere and low cost, and the concave structure monocrystalline graphene has very good application prospect in the fields of optical and microwave diodes and sensors.

Description

Technical field [0001] The invention relates to a single-crystal graphene with a concave structure and a preparation method thereof, in particular to a controllable preparation of a single-crystal graphene with a central single-layer outer double-layer structure. Background technique [0002] Since 2004, people have made huge breakthroughs in the research on the properties and applications of graphene, and the corresponding graphene preparation technology is also progressing rapidly. Finding a fast and cheap way to prepare high-quality graphene is The focus of all graphene researchers. So far, people have developed mechanical peeling method, silicon carbide epitaxy method, liquid phase peeling method, redox method, chemical vapor deposition method and bottom-up synthesis method. These methods have their own advantages and are suitable for different occasions. Among them, chemical vapor deposition is considered to be the most promising preparation method. [0003] With in-depth re...

Claims

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Application Information

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IPC IPC(8): C01B32/186C30B29/02C30B25/00C30B29/64
Inventor 涂溶张翅腾飞章嵩张联盟
Owner WUHAN UNIV OF TECH
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