Manufacturing method of COF substrate integrating dense circuits and sparse circuits
A manufacturing method and circuit technology, applied in printed circuit manufacturing, removal of conductive materials by chemical/electrolytic methods, printed circuits, etc., can solve the problem of not being able to ensure the goodness of circuit etching in dense circuit areas and sparse circuit areas at the same time , to achieve the effect of suppressing the shape defect and shortening the time
Inactive Publication Date: 2021-01-15
江苏上达半导体有限公司
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Problems solved by technology
[0005] Aiming at the deficiencies of the existing technology, the present invention provides a COF substrate manufacturing method integrating dense lines and sparse lines, which solves the problem that the prior art cannot guarantee the goodness of line etching in the line-dense area and the line-sparse area at the same time
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Embodiment
[0031] An embodiment of the present invention provides a method for manufacturing a COF substrate integrating dense lines and sparse lines, including the following manufacturing steps:
[0032] 1. Insulating substrate process, as shown in Figure 1(a):
[0033] 1) First, apply the adhesive layer 22 of the adhesive on the resin film 21 and prepare the insulating substrate 20. The resin film 21 can be selected from resins such as polyimide, polyethylene naphthalate, epoxy, and aromatic amine. , a flexible film with a thickness of about 50 μm can be used, and as the adhesive layer 22, an epoxy-based thermosetting adhesive sheet or the like can be laminated on the resin film 21 for use;
[0034] 2) On the insulating substrate 20, a metal layer copper foil 11 with a thickness of 30 μm or more and 150 μm or less is formed through an adhesive layer 22; or, a copper sheet laminate in which copper foil 11 is formed on the insulating substrate 20 in advance, copper foil 11 is bonded on ...
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Abstract
The invention provides a manufacturing method of a COF substrate integrating dense circuits and sparse circuits, and relates to the technical field of COF substrate manufacturing. The manufacturing method of the COF substrate integrating the dense circuits and the sparse circuits comprises the following manufacturing processes: 1, an insulating substrate process: 1) coating a resin film with an adhesion layer of an adhesive to prepare an insulating substrate with the adhesion layer; and 2) forming a copper foil on the insulating substrate through the adhesion layer; alternatively using a copper sheet laminate in which a copper foil is formed on the insulating substrate in advance, and forming the copper foil on the insulating substrate by adhering the copper foil to the resin film via theadhesion layer. According to the present invention, in the step, a step for processing a copper foil by wet etching is performed in each of predetermined formation regions of a sparse portion and a dense portion, and in the predetermined formation regions of the dense portion, the copper foil is further processed with laser light, so that etching residues between wirings in the dense portion and defects in the shape of wirings in the sparse portion are suppressed, and a wiring line including a sparse portion and a dense portion may be formed.
Description
technical field [0001] The invention relates to the technical field of COF substrate manufacturing, in particular to a COF substrate manufacturing method integrating dense circuits and sparse circuits. Background technique [0002] With the continuous development of science and technology, electronic products are increasingly developing in the direction of miniaturization, intelligence, high performance and high reliability. The packaging substrate is transitioned from FPC to COF, and the PTCH value of COF substrate is getting smaller and smaller. The pins are becoming more and more dense and precise, and the integrated circuit packaging not only directly affects the performance of integrated circuits, electronic modules and even the whole machine, but also restricts the miniaturization, low cost and reliability of the entire electronic system. With the gradual reduction of the size of the integrated circuit chip and the continuous improvement of the integration level, the e...
Claims
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IPC IPC(8): H05K3/06H05K3/02
CPCH05K3/027H05K3/06H05K2203/107
Inventor 戚爱康计晓东孙彬沈洪李晓华
Owner 江苏上达半导体有限公司