Coating equipment and coating method for making transparent conductive oxide film

An oxide film, transparent and conductive technology, applied in the field of silicon-based heterojunction solar cells, to prevent deformation, avoid mutual influence, wide application prospects and economic value.

An oxide film, transparent and conductive technology, applied in the field of silicon-based heterojunction solar cells, to prevent deformation, avoid mutual influence, wide application prospects and economic value.

CN112239847APending Publication Date: 2021-01-19SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

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  • Coating equipment and coating method for making transparent conductive oxide film
  • Coating equipment and coating method for making transparent conductive oxide film
  • Coating equipment and coating method for making transparent conductive oxide film

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Embodiment Construction

[0056] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0057] When describing the embodiments of the present invention in detail, for the convenience of description, the schematic structural diagram representing the device will not be partially enlarged or reduced according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional spatial dimensions of length, width and depth should ...

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Abstract

The invention provides coating equipment and a coating method for making a transparent conductive oxide film. The coating equipment comprises cathode coating sources and carrying discs, wherein each carrying disc comprises a disc following component and a carrying step; through the cathode coating sources, double-sided coating is carried out in the same vacuum cavity without overturning; gaps among the plurality of carrying discs are shielded through the disc following component, so that the isolated layout of the cathode coating sources is realized, and the mutual influence of the cathode coating sources is avoided; a to-be-coated piece is carried by the carrying step and is shielded, so that the conduction of the transparent conductive oxide film is avoided, and the short circuit of an SHJ solar cell is avoided; and through a reinforcing component, deformation of the carrying discs is prevented, and product quality is improved. The coating equipment and the coating method realize stress-free double-sided co-located continuous coating, reduce the occupied area of the coating equipment, avoid overturning of the to-be-coated piece, improve the product quality, and have the advantages of low cost, high stability, wide application prospect and high economic value.

Description

technical field [0001] The invention belongs to the field of silicon-based heterojunction solar cells, and relates to coating equipment and a coating method for making transparent conductive oxide thin films. Background technique [0002] Silicon-based heterojunction solar cells (crystalline silicon / thin-film silicon heterojunction solar cells) are high-efficiency solar cells, referred to as HITR solar cells (Heterojunction with Intrinsic Thin-layer) or SHJ solar cells (SiliconHetero Junction), and are widely used in China. Use the latter. The basic structure of SHJ solar cells is as follows: figure 1 As shown, the battery uses N-type crystalline silicon 101 as the substrate. Firstly, it is surface textured and chemically cleaned to form a pyramidal light-limiting structure that improves light absorption, and then a clean surface is formed after chemical cleaning. Then use plasma chemical vapor deposition (PECVD), metal thermal catalytic chemical vapor deposition (Cat-CVD)...

Claims

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Application Information

Patent Timeline
19 Jan 2021
Publication
CN112239847A
IPC
C23C14/08; C23C14/35; C23C14/50
CPC
C23C14/086; C23C14/08; C23C14/083; C23C14/352; C23C14/50
Inventors
石建华; ε­Ÿε‡‘θ‹±