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Method for improving photoetching pattern perpendicularity

A technology of verticality and graphics, which is applied in the direction of microlithography exposure equipment, photoplate making process of patterned surface, and originals used in photomechanical processing, etc., can solve the problem of excessive white margins and prevent excessive white margins , Improve the effect of verticality

Pending Publication Date: 2021-01-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a method for improving the verticality of photolithographic patterns, by adjusting the design layout of the mask plate to improve the verticality of photolithographic patterns, preventing the problem of excessive white margins at the edges of the photolithographic patterns. Ensuring the quality of lithography pattern while ensuring the efficiency of lithography process

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  • Method for improving photoetching pattern perpendicularity
  • Method for improving photoetching pattern perpendicularity
  • Method for improving photoetching pattern perpendicularity

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Embodiment Construction

[0033] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0034] figure 1 It is a flowchart of a method for improving the verticality of photolithography patterns provided by an embodiment of the present invention. refer to figure 1 The method for improving the verticality of photolithographic patterns provided by this embodiment includes:

[0035] Step S01: Provide a design layout of a mask plate, the design layout includes a first pattern and a second pattern, wherein the feature size of the second pattern is smaller than the resolution of the photolithography machin...

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Abstract

The invention provides a method for improving the photoetching pattern perpendicularity, which comprises the following steps of: providing a design layout of a mask, the design layout comprising a first pattern and a second pattern, wherein the characteristic size of the second pattern is smaller than the resolution of a photoetching machine, the distance between the first pattern and the second pattern is between 1 / 2 and 2 / 3 of the exposure light wavelength lambda of the photoetching machine; and manufacturing a mask plate according to the design layout, and photoetching a wafer by using themask plate to improve the perpendicularity of a photoetching pattern formed on the wafer. According to the method for improving the photolithographic pattern perpendicularity, the perpendicularity ofthe photolithographic pattern is improved by adjusting the design layout of the mask plate and utilizing the optical proximity effect, the problem that the edge of the photolithographic pattern is toolarge in white edge is solved, and the efficiency of a photolithographic process is ensured while the quality of the photolithographic pattern is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving the verticality of photolithography patterns. Background technique [0002] The photolithography process is an important step in the semiconductor device manufacturing process. The conventional photolithography technology uses a wavelength of Ultraviolet light is used as the exposure light, and the mask is used as the intermediate medium to realize the transformation, transfer and processing of the graphics, and finally transfer the image information to the wafer (mainly referring to the silicon wafer) or a process on the dielectric layer. In the semiconductor manufacturing process, the quality of the pattern formed by the lithography process is an important indicator for judging the success of the lithography process, which directly affects the feasibility of the subsequent process and the yield and stability of the final product. [0003] In gene...

Claims

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Application Information

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IPC IPC(8): G03F1/70G03F7/20
CPCG03F1/70G03F7/70491
Inventor 李伟峰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP