Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Infrared radio frequency signal detector based on metasurface optical antenna and preparation method thereof

An optical antenna and radio frequency signal technology, applied in the field of signal detection, can solve the problems of large volume and slow wave band, and achieve the effect of small volume

Pending Publication Date: 2021-01-22
HUAZHONG UNIV OF SCI & TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the above defects or improvement needs of the prior art, the present invention provides an infrared radio frequency signal detector based on a metasurface optical antenna and a preparation method thereof, the purpose of which is to solve the existing problems of the prior art such as large volume, slow response and narrow band technical issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared radio frequency signal detector based on metasurface optical antenna and preparation method thereof
  • Infrared radio frequency signal detector based on metasurface optical antenna and preparation method thereof
  • Infrared radio frequency signal detector based on metasurface optical antenna and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] An infrared radio frequency signal detector based on a metasurface optical antenna, such as figure 1 As shown, it includes: substrate 1 (thickness 200-500μm), doped layer 2 (thickness 1um-2um, doping concentration 1×10 16 cm -3 ~9×10 18 cm -3 ) and a silicon dioxide layer 3 (thickness is 100-300nm), fabricated on the doped layer 2 and a metasurface optical antenna layer 4 (thickness is 50-220nm) that forms a Schottky contact with the doped layer 2, fabricated in On the doped layer 2, an ohmic electrode 5 forming an ohmic contact with the doped layer 2, and a Schottky electrode 6 and an ordinary electrode 7 positioned on the upper surface of the silicon dioxide layer 3; wherein, the metasurface optical antenna layer 4 is connected with the The Schottky electrode 6 is connected to the common electrode 7 , and its internal gap is filled with a silicon dioxide layer; the silicon dioxide layer 3 , the metasurface optical antenna layer 4 and the ohmic electrode 5 cover the...

Embodiment 2

[0065] An infrared radio frequency signal detector based on a metasurface optical antenna, such as Figure 9 As shown, it includes: a substrate 1, a first doped layer 12 and a first silicon dioxide layer 13 sequentially arranged upward from the upper surface of the substrate 1, a second doped layer 22 and a first silicon dioxide layer sequentially arranged downward from the lower surface of the substrate. The second silicon dioxide layer 23, the first metasurface optical antenna layer 14 formed on the first doped layer 12 to form a Schottky contact with the first doped layer 12, is made under the second doped layer 22 The second metasurface optical antenna layer 24 forming a Schottky contact with the second doped layer 22, the first ohmic electrode 15 formed on the first doped layer 12 and forming an ohmic contact with the first doped layer 12, making The second ohmic electrode 25 forming ohmic contact with the second doped layer 22 under the second doped layer 22, the first S...

Embodiment 3

[0074] A preparation method of the infrared signal detector provided by Embodiment 1 of the present invention, comprising the following steps:

[0075] S101. Implanting doping ions on the substrate (semi-insulating GaAs layer) by metal-organic compound chemical vapor deposition, with a doping concentration of 1×10 16 cm -3 ~9×10 18 cm -3 , forming a doped layer (N-type GaAs layer);

[0076] S102. Prepare a silicon dioxide layer on the doped layer by plasma-enhanced chemical vapor deposition, the thickness of which is 200nm-400nm;

[0077] S103. Photoetching the ohmic electrode contact hole pattern on the silicon dioxide layer through a positive resist process, and etching the silicon dioxide layer at the position of the ohmic electrode contact hole pattern to obtain an ohmic electrode contact hole; photolithography through a negative resist process Ohmic electrode pattern, using electron beam evaporation method to sequentially evaporate stacked Ni / Ge / Au layers (thicknesses...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses an infrared radio frequency signal detector based on a metasurface optical antenna and a preparation method of the infrared radio frequency signal detector. The infrared radiofrequency signal detector comprises a substrate, a doping layer, a silicon dioxide layer which are sequentially arranged from bottom to top, and a metasurface optical antenna layer which is manufactured on the doping layer and forms Schottky contact with the doping layer, an ohmic electrode which is manufactured on the doping layer and forms ohmic contact with the doping layer, and a Schottky electrode and a common electrode that are located on the upper surface of the silicon dioxide layer. The metasurface optical antenna layer is of an array structure composed of a plurality of metal layersarranged at intervals, the metal layers comprise a first metal layer and a second metal layer, the first metal layer is a metal nano tip array with a width of 0.5-5mm and a periodic nano tip structure, and the second metal layer is a metal array with a width of 5-100mm and is composed of micron elements arranged periodically; the metasurface optical antenna layer has a local surface plasmon effecton incident infrared, radio frequency S, C or X waveband signals, and signal detection with a high response speed can be completed with a small size.

Description

technical field [0001] The invention belongs to the technical field of signal detection, and more specifically relates to an infrared radio frequency signal detector based on a metasurface optical antenna and a preparation method thereof. Background technique [0002] Infrared, radio frequency S-band, C-band or X-band detection is widely used in many fields such as security monitoring system, material detection, space communication, signal detection, aerospace and radar. Existing infrared radio frequency detectors mainly include a scanning subsystem, a receiver subsystem, and a calibration subsystem. Detection is performed through an antenna, such as a horn focusing antenna, which is large in size and can reach tens of centimeters or decimeters. The detection device needs to be matched Complex and precise feeding, driving or scanning mechanisms (such as rotating platforms, waveguide transmission, vector analyzers, etc.), large volume and mass, slow response speed; and indepe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/115H01L31/0236H01L31/0216H01L31/18H01Q15/00H01Q15/10
CPCH01L31/02161H01L31/02366H01L31/115H01L31/18H01Q15/006H01Q15/0086H01Q15/10Y02P70/50
Inventor 罗俊胡钗魏东张新宇
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products