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Single-mode high-power semiconductor laser

A technology of lasers and semiconductors, applied in semiconductor lasers, lasers, laser components, etc., can solve difficult problems such as single-chip integration of photonic integrated chips

Pending Publication Date: 2021-01-22
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the MMI semiconductor laser with this structure usually needs to be cleaved to realize the end mirror to form a laser cavity, which is difficult to monolithically integrate with photonic integrated chips

Method used

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  • Single-mode high-power semiconductor laser
  • Single-mode high-power semiconductor laser
  • Single-mode high-power semiconductor laser

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] The invention provides a single-mode high-power MMI semiconductor laser. The multi-mode interference mirror of the semiconductor laser is formed by an etching process. The semiconductor laser can be applied to photonic integrated chips, laser radar, laser lighting, laser pumping, and material processing. and other fields.

[0029] figure 1 A schematic diagram of the structure of the single-mode high-power semiconductor laser provided by the first embodiment of the present invention is shown.

[0030] Such as figure 1 As shown, the single-mode high-power semiconductor laser includes: a first single-mode waveguide 1, a first tapered waveguide 2, a multi-mode interference waveguide 3, a second tapered waveguide 4, a...

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PUM

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Abstract

The invention relates to a semiconductor laser, which comprises a first single-mode waveguide (1), a first conical waveguide (2), a multimode interference waveguide (3), a second conical waveguide (4), a second single-mode waveguide (5), a third conical waveguide (6) and a first multimode interference reflector (7) which are connected in sequence, wherein the end face (10) of the first single-modewaveguide (1) and the first multimode interference reflector (7) can form a laser cavity and then end face serves as a reflector of the laser cavity; wherein the first multimode interference reflector (7) is formed by an etching process. The semiconductor laser further comprises an optical grating (8) arranged on the first single-mode waveguide (1), the optical grating (8) and the first multimodeinterference reflector (7) can form a laser cavity and the optical grating (8) serves as a reflector of the laser cavity, and the semiconductor laser outputs laser through the end face (10). The semiconductor laser may be monolithically integrated with one or more photonic integrated chips.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a single-mode high-power semiconductor laser. Background technique [0002] Semiconductor lasers are widely used in many fields such as optical communication, optical interconnection, laser radar, material processing, intelligent manufacturing, consumer electronics, etc., and are indispensable light sources in the modern information society. In particular, single-mode high-power semiconductor lasers have special applications and important positions. Generally, if there is no special mode selection structure in a semiconductor laser (such as a Fabrow-Perot laser), multiple longitudinal modes will be output. In addition, in order to meet the high beam quality requirements of semiconductor lasers, the light emitting area of ​​semiconductor lasers is limited, and the single-mode output power of semiconductor lasers is limited. To achieve high power outp...

Claims

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Application Information

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IPC IPC(8): H01S5/10H01S5/065H01S5/026
CPCH01S5/1003H01S5/1014H01S5/10H01S5/0654H01S5/026
Inventor 刘安金张靖
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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