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A preparation method and system for an in-situ doped passivation layer of a topcon solar cell

A solar cell, in-situ doping technology, applied in circuits, electrical components, photovoltaic power generation, etc., to solve the problem of low production capacity and improve production safety

Active Publication Date: 2022-04-22
江苏杰太光电技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, phosphine is a flammable, explosive and highly toxic gas, and its transportation, handling, storage and use all have high safety risks

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  • A preparation method and system for an in-situ doped passivation layer of a topcon solar cell
  • A preparation method and system for an in-situ doped passivation layer of a topcon solar cell

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Embodiment Construction

[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0023] refer to figure 1 Shown preparation system, the preparation method of TOPCon solar cell in-situ doping passivation layer provided by the invention, comprises the steps:

[0024] S1. First, transport the silicon wafer 10 loaded into the carrier into the reaction position in the process chamber 20; wherein, the silicon wafer 10 enters the process chamber 20 by means of plate transport, chain transport, or tube transport, which is not specifically limited; Wherein, when the plate transport is adopted, the silicon wafer 10 is laid flat on the carrier plate;

[0025] S2. After the silicon wafer enters the process chamber 20, the process chamber 20 is first evacuated to 0.3-30Pa by vacuum equipment 30;

[0026] S3. Then pass the mixed gas of silane and red phosphorus vapor ...

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Abstract

The invention discloses a method for preparing a TOPCon solar cell in-situ doped passivation layer, which comprises the following steps: S1. First, the silicon wafer is transported into the process chamber; S2. After the silicon wafer enters the process chamber, the process chamber is pumped out first. Vacuum; S3. Then feed silane and red phosphorus vapor into the vacuumed process chamber as process gas, and turn on rapid heating to quickly heat the process gas and silicon wafer to the reaction temperature at the same time, then turn on the power to stimulate plasma discharge, silane React with red phosphorus vapor in high temperature and low pressure vacuum to form a phosphorus-containing silicon film on the surface of the silicon wafer to complete in-situ doping. The present invention adopts a one-step in-situ doping method to replace the traditional two-step deposition and doping method for preparing doped layers, and uses safer red phosphorus vapor instead of phosphine as a phosphorus dopant, fundamentally Solve the problems of low production capacity and high cost of high-efficiency solar cells, and significantly improve production safety.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation, in particular to a method and system for preparing a TOPCon solar cell in-situ doped passivation layer. Background technique [0002] In recent years, with the research and development of crystalline silicon solar cells, both theory and practice have proved that surface passivation is the only way to improve cell efficiency, and aluminum oxide thin layer passivation has been widely promoted on PERC cells. However, the passivation effect of doped polysilicon and silicon oxide stack is better, which is the prospect of the development of next-generation mass production technology. This is due to the chemical passivation effect of silicon oxide on the surface of crystalline silicon, and doped polysilicon has a good field passivation effect. But because silicon oxide is insulating, it prevents internal charge carriers from being introduced into the doped polysilicon charge-collecting l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/1804H01L31/1868H01L31/1864H01L31/186H01L31/02167Y02E10/547Y02P70/50
Inventor 闫路上官泉元
Owner 江苏杰太光电技术有限公司