A low-angle-dependent real-time color-changing film based on electric field manipulation
A color-changing film and low-angle technology, which is applied in the field of color-changing materials, can solve the problems of not realizing real-time color changing, and can not achieve real-time color changing, and achieves the effect of low cost and simple manufacturing process
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Embodiment 2
[0038] Due to the complexity of the irregular surface morphology, theoretical calculation and multi-parameter optimization are quite difficult when studying the interaction between light and this irregular surface. Therefore, numerical simulation methods are used to simulate the best parameters for film design. In the simulation process, first design a curve with random fluctuations, and then generate a rough film. The degree of fluctuation of this curve is controllable. By changing the parameters, different degrees of fluctuation can be obtained, that is, the roughness of the film can be simulated. In this simulation, when the roughness parameter N is 30, b is 5, and the film thickness is 122nm, the position of the reflection peak can move within 30 degrees, and the position of the reflection peak can move less than 10nm. When observed in a small angle range, the color is almost no change. Achieve stealth effect.
[0039] Such as figure 2 As shown, prepare the BST target m...
Embodiment 3
[0044] Continue to optimize the roughness of the BST film. When N=20, b=1.4, the film thickness is 121nm, but at this time the required refractive index changes, so the components of strontium and barium should be adjusted to achieve the required refractive index. It can be achieved that within 30 degrees, the position of the reflection peak moves less than 10nm, and when observed in a small angle range, the color hardly changes. Achieve stealth effect.
[0045] Such as figure 2 As shown, prepare the BST target material with the desired composition of strontium and barium, and adjust the composition of strontium and barium so that the initial refractive index of the BST material is 2.5 when no electric field is applied. The silicon substrate is roughened to form uneven and irregular surface micro-nano structures. A layer of transparent electrode is grown on the roughened silicon substrate, and the transparent electrode continues to use indium tin oxide (ITO) material, and i...
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