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Biosensor based on graphene field effect transistor and preparation method and application thereof

A technology of field-effect transistors and biosensors, applied in the field of biosensors, can solve problems such as application limitations and electrical sensitivity limitations, and achieve the effects of rapid response, stable performance, and high detection limit

Inactive Publication Date: 2021-02-05
深圳万物传感科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the electrical sensitivity of graphene itself is limited by the quality of the substrate and the external environment, which greatly limits its application.

Method used

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  • Biosensor based on graphene field effect transistor and preparation method and application thereof
  • Biosensor based on graphene field effect transistor and preparation method and application thereof
  • Biosensor based on graphene field effect transistor and preparation method and application thereof

Examples

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preparation example Construction

[0036] In a second aspect, the present invention also provides a method for preparing a biosensor based on a graphene field effect transistor, comprising the following steps:

[0037] Fabrication of graphene / boron nitride / graphene van der Waals heterojunction: provide graphene, hexagonal boron nitride nanosheets, and single-throw silicon oxide sheets, attach graphene to a silicon dioxide spacer to obtain graphene Gate electrode, and then transfer the hexagonal boron nitride nanosheets to the graphene gate electrode to obtain the hexagonal boron nitride gate oxide layer, and finally transfer the graphene to the hexagonal boron nitride gate oxide layer to obtain the graphene channel. Obtain graphene / boron nitride / graphene van der Waals heterojunction;

[0038] Preparation of biosensors based on graphene field-effect transistors: source and drain electrodes are deposited on graphene channels of graphene / boron nitride / graphene van der Waals heterojunctions to obtain two-dimensiona...

Embodiment 1

[0054] Such as figure 1 Shown is a graphene-based field-effect transistor biosensor. The graphene field-effect transistor-based biosensor has a p-type doped silicon substrate 1, a silicon dioxide isolation layer 2, a mechanically exfoliated graphene gate electrode 3, and a mechanically exfoliated hexagonal boron nitride gate oxide from bottom to top. Layer 4, mechanically exfoliated graphene channel 5, source electrode 6, drain electrode 7, activated carboxyl groups 8 on the surface of graphene channel, and the specificity associated with the occurrence and development of Alzheimer's disease (hereinafter referred to as "AD") Antibody 9.

[0055] Further, the thickness of the silicon substrate is 300 μm, and the resistivity is 2Ω·cm.

[0056] Further, the thickness of the silicon dioxide isolation layer is 300nm.

[0057] Further, graphene is single-atom thick.

[0058] Further, the thickness of the hexagonal boron nitride is 23nm.

[0059] Further, the source and drain el...

Embodiment 2

[0071] Identical to the structure of the biosensor based on the graphene field effect transistor in Example 1, the biosensor based on the graphene field effect transistor has a p-type doped silicon substrate 1, a silicon dioxide isolation layer 2, Mechanically exfoliated graphene gate electrode 3, mechanically exfoliated hexagonal boron nitride gate oxide layer 4, mechanically exfoliated graphene channel 5, source electrode 6, drain electrode 7, activated carboxyl groups 8 on the surface of graphene channel, and AD generation 9. Development of related specific antibodies.

[0072] Further, the silicon substrate has a thickness of 500 μm and a resistivity of 10 Ω·cm.

[0073] Further, the thickness of the silicon dioxide isolation layer is 500nm.

[0074] Further, graphene is single-atom thick.

[0075] Further, the thickness of the hexagonal boron nitride is 28nm.

[0076] Further, the source and drain electrodes are made of chromium / gold material, wherein the thickness of ...

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Abstract

The invention provides a biosensor based on a graphene field effect transistor graphene field effect transistor. The biosensor sequentially comprises a silicon substrate, a silicon dioxide isolation layer, a graphene gate electrode, a hexagonal boron nitride gate oxide layer and a graphene channel from bottom to top, and is characterized in that the graphene channel is provided with a source electrode and a drain electrode; a specific antibody is bonded on the graphene channel, and after the specific antibody is combined with a corresponding antigen, the corresponding antigen is deposited on the graphene channel so as to change a Dirac point of the graphene channel. The biosensor based on the graphene field effect transistor has the advantages of high detection limit, quick response, stable performance and the like, and is a novel biosensor capable of carrying out trace detection. The invention further provides a preparation method and application of the biosensor based on the graphenefield effect transistor.

Description

technical field [0001] The invention relates to the technical field of biosensors, in particular to a graphene field effect transistor-based biosensor, and the invention also relates to a preparation method and application of a graphene field effect transistor-based biosensor. Background technique [0002] A biosensor is an instrument that is sensitive to biological substances and converts their concentration into electrical signals for detection. It usually consists of immobilized biosensitive materials as recognition elements (such as antibodies, etc.), appropriate physical and chemical transducers (such as field effect transistors, etc.) and signal amplification devices. Biosensors are not only used in the field of biotechnology, but also include environmental monitoring, medical and sanitation, and food inspection. Facing the needs of future miniaturization, intelligence and integration, biosensors using new two-dimensional field-effect transistors in the fields of scie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
CPCG01N27/4145
Inventor 樊思迪
Owner 深圳万物传感科技有限公司
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