Temperature sensor based on MOS transistor

Abstract

A temperature sensor based on an MOS transistor is characterized in that the grid electrode of a first PMOS transistor in a positive temperature coefficient voltage generation module is connected withthe source electrode of a second PMOS transistor and one end of a second resistor, the source electrode of the first PMOS transistor is connected with the other end of the second resistor and a powersupply voltage, and the drain electrode of the first PMOS transistor is connected with the grid electrode of the second PMOS transistor and the drain electrode of a first NMOS transistor; the grid electrode of a second NMOS transistor in the negative temperature coefficient voltage generation module is connected with the source electrode of the first NMOS transistor and one end of a first resistor, a source electrode of the second NMOS transistor is connected with the other end of the first resistor and is grounded, the drain electrode of the second NMOS transistor is connected with the gridelectrode of the first NMOS transistor and the drain electrode of the second PMOS transistor, the width-to-length ratio of the four MOS tubes is adjusted to make the current flowing through the secondNMOS transistor same to the current flowing through the first PMOS transistor, the drain electrode of the second NMOS transistor outputs negative temperature coefficient voltage, and the drain electrode of the first PMOS transistor outputs positive temperature coefficient voltage; and the output module uses a difference signal obtained by subtracting the negative temperature coefficient voltage from the positive temperature coefficient voltage as an output signal of the temperature sensor, so that the swing of the output signal along with the temperature change is increased, and the sensitivity of the temperature sensor is improved.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuits, and relates to a temperature sensor in an integrated circuit, in particular to a low-power consumption temperature sensor circuit based on a MOS tube. Background technique [0002] Temperature is a basic physical phenomenon. It is the most commonly used and most important process parameter in the production process. Whether it is industrial and agricultural production, scientific research and national defense modernization, temperature measurement and temperature sensors are inseparable. With the rapid development of integrated circuit technology, temperature sensors are widely used in medical treatment, environmental monitoring, circuit and system control, and wireless Internet of Things platforms. There is a great demand for temperature sensors with low power consumption, small chip area and high sensitivity, and the integration of temperature sensors has become an important ...

AI Technical Summary

Problems solved by technology

However, the existing temperature sensors based on MOS tubes often only collect a temperature-related voltage and obtain temperature changes from it, so it is difficult to improve their sensitivity

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