EMCCD with high light collection efficiency and manufacturing method thereof

Abstract

The invention discloses an EMCCD manufacturing method with high light collection efficiency, and the method adopts a time domain finite difference algorithm to calculate all-dielectric periodic pattern arrangement and incident light action, light wave phase change and light wave focusing characteristics, and designs an all-dielectric periodic planar pattern with an incident light wave front regulation and control function to realize a light wave phase matching function. The manufacturing of the all-dielectric periodic planar pattern is a semiconductor process matched and compatible with an EMCCD manufacturing procedure. The manufacturing of the all-dielectric periodic pattern on the surface of the EMCCD is completed through the main process steps of EMCCD wafer cleaning, surface dielectricgrowth, dielectric surface planarization, silicon film deposition, dielectric growth, photoresist spin-coating and pre-baking, developing, fixing and hardening, photoetching and the like. By manufacturing and processing the full-dielectric periodic pattern, the incident light can be collimated and processed in parallel, the response condition of the incident light on the surface of the EMCCD is changed to achieve efficient light absorption, and the light collection efficiency of the EMCCD is improved.

Description

technical field [0001] The invention relates to the technical field of electron multiplication CCDs, in particular to an EMCCD with high light collection efficiency and a manufacturing method thereof. Background technique [0002] Electron multiplier CCD (EMCCD) is a high-end photoelectric detection product with extremely high sensitivity in the detection field. EMCCD realizes the controllable avalanche gain of signal charge by designing cascaded multiplication shift registers on the signal transfer horizontal path, and realizes the function of CCD charge multiplication. [0003] Existing EMCCD pixels use MOS capacitors or photodiodes. The existing problem is that both MOS capacitors and photodiodes are covered with polysilicon or metal on the surface, resulting in the problems of small pixel duty cycle and low pixel quantum efficiency. The problem directly affects the light collection efficiency of the EMCCD, thereby seriously reducing the ability of the EMCCD to obtain de...

AI Technical Summary

Problems solved by technology

[0004] In view of the current EMCCD design and manufacture process, because the pixel is shielded by part of the clock electrode, the incident light cannot be efficiently collected and the technical problem affecting the application of EMCCD in a weak light environment, the purpose of the present invention is to provide an EMCCD with high light collection efficiency and the manufacturing method thereof, on the surface of the EMCCD chip, an all-dielectric periodic planar pattern is produced, and the incident light can be collimated and parallel-processed by making and processing the all-dielectric periodic pattern, so as to change the response of the incident light on the surface of the EMCCD to achieve high-efficiency light absorption and improve EMCCD Light Collection Efficiency

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