A kind of manufacturing method of high-speed dfb laser

Abstract

The present invention provides a method for manufacturing a high-speed DFB laser, comprising the following steps: 1) growing a first N-type InP layer, an N-type grating layer, a first intrinsic InP layer, and an intrinsic InGaAsP layer on an N-type InP substrate in sequence 2) The optical waveguide region and the non-optical waveguide region are formed by photolithography, and the first intrinsic InP layer, the intrinsic InGaAsP layer and the second intrinsic InP layer in the non-optical waveguide region are etched away; 3 ) Make gratings in the non-optical waveguide region; 4) Perform low temperature heat treatment on the epitaxial wafer first, and then perform high temperature heat treatment; then grow the second N-type InP layer, AlGaInAs multiple quantum wells, the first P-type InP layer, P-type InGaAsP stop layer, the second P-type InP layer, and the P-type InGaAs contact layer; 5) lithography to form a ridge waveguide; 6) to perform lithography on the ridge bar injection area; 7) to form BCB regions on both sides of the ridge bar; 8) Photolithography to form P-surface electrode; 9) N-surface electrode fabrication. In the present invention, the chip size is equivalent to that of 2.5G DFB products, the oxidation of Al-containing materials can be eliminated, and the reliability of high-speed DFBs can be significantly improved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and in particular relates to a manufacturing method of a high-speed DFB laser. Background technique [0002] With the continuous development of the Internet information age, the rapid advancement of data centers and 5G networks, and the continuous increase in the amount of data information transmission, the transmission rate of DFB lasers as an information transmission medium has been continuously improved. In particular, 25G DFB lasers have become the mainstream solution for applications. Therefore, the reliability of high-speed DFB lasers will be an important guarantee for high-speed transmission. [0003] At present, 25G DFB lasers mainly use RWG and BH schemes of AlGaInAs material system with short cavity length (generally 150um). (1) Using the BH scheme, it is necessary to increase the semi-insulating (Fe or Ru) buried growth, and the fabrication process is complicated. At the same ...

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Problems solved by technology

(1) Using the BH scheme, it is necessary to increase semi-insulating (Fe or Ru) buried growth, and the manufacturing process is complicated. At the same time, semi-insulating growth is easy to introduce growth defects, thereby affecting reliability; (2) Using the RWG scheme, the manufacturing process is simple, but the chip Small size increases the difficulty of chip cleavage and clamping. At the same time, the Al-containing material on the cavity surface is easily oxidized in the air after cleavage. It is necessary to add a complex coating process to ensure its reliability, but it still cannot completely eliminate the cleavage and coating. resulting in uncertainty

In addition, the size of the chip is reduced, the heat dissipation of the chip is poor, the difficulty of chip packaging and the cost of packaging increase, resulting in an increase in the risk of chip reliability

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