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Preparation method of chromium-tantalum-boron alloy powder

A technology of boron alloy and powder, which is applied in the field of preparation of chromium-tantalum-boron alloy powder, can solve the problems of coarse target material grains, cumbersome steps, unfavorable target material use, etc., and achieves easy implementation, simple process flow and good sphericity Effect

Pending Publication Date: 2021-02-26
河南东微电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The steps of this method are cumbersome, and the grains of the prepared target are easy to be coarse, which is not conducive to the use of the target.

Method used

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  • Preparation method of chromium-tantalum-boron alloy powder
  • Preparation method of chromium-tantalum-boron alloy powder
  • Preparation method of chromium-tantalum-boron alloy powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment includes the following steps:

[0024] Step 1: Weigh 4.53kg chromium block (purity 99.99%), 15.45kg tantalum flakes (purity 99.99%), 19.9g boron powder (purity 99.9%, particle size >400μm) and mix together;

[0025] Step 2: Put the raw materials into the high-frequency melting furnace of the vacuum induction melting gas atomization powder making equipment, pump the air to a vacuum of 3Pa, fill it with argon to 0.4MPa, heat to 2400°C for melting, and keep it warm for 40min. The alloy liquid is mixed evenly. Repeat smelting 4 times;

[0026] Step 3: Lead the master alloy liquid into the high-temperature gas atomization powder making equipment through the tundish, control the chamber pressure to 0.4MPa, the atomization pressure to 2.3MPa, the spray casting pressure to 0.5MPa, use argon as the atomization gas, and the alloy The liquid is dispersed and rapidly cooled under the action of high-pressure airflow to form alloy powder;

[0027] Step 4: The powde...

Embodiment 2

[0032] This embodiment includes the following steps:

[0033] Step 1: Weigh 8.26kg chromium block (purity 99.99%), 11.71kg tantalum flakes (purity 99.99%), 37.8g boron powder (purity 99.9%, particle size >400μm) and mix together;

[0034] Step 2: Put the raw materials into the high-frequency melting furnace of the vacuum induction melting gas atomization powder making equipment, pump the air to a vacuum degree of 8Pa, fill it with argon to 0.2MPa, heat to 2300°C for melting, and keep it warm for 30min. The alloy liquid is mixed evenly. Repeat smelting 3 times;

[0035] Step 3: Lead the master alloy liquid into the high-temperature gas atomization powder making equipment through the tundish, control the chamber pressure to 0.2MPa, the atomization pressure to 2.0MPa, the spray casting pressure to 0.4MPa, use argon as the atomization gas, and the alloy The liquid is dispersed and rapidly cooled under the action of high-pressure airflow to form alloy powder;

[0036] Step 4: Th...

Embodiment 3

[0038] This embodiment includes the following steps:

[0039] Step 1: Weigh 15.14kg chromium block (purity 99.99%), 4.79kg tantalum flakes (purity 99.99%), 67.9g boron powder (purity 99.9%, particle size >400μm) and mix together;

[0040] Step 2: Put the raw materials into the high-frequency melting furnace of the vacuum induction melting gas atomization powder making equipment, pump the air to a vacuum degree of 10Pa, fill it with argon gas to 0.3MPa, heat to 2250°C for melting, and keep it warm for 30min. The alloy liquid is mixed evenly. Repeat smelting 4 times;

[0041] Step 3: Lead the master alloy liquid into the high-temperature gas atomization powder making equipment through the tundish. The liquid is dispersed and rapidly cooled under the action of high-pressure airflow to form alloy powder;

[0042] Step 4: The powder obtained in Step 3 is ultrasonically washed, dried and sieved to obtain chromium-tantalum-boron alloy powder.

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Abstract

The invention discloses a preparation method of chromium-tantalum-boron alloy powder. The preparation method comprises the following steps that 1, a chromium block (the purity is 99.99%), a tantalum sheet (the purity is 99.99%) and boron powder (the purity is 99.9% and the particle size is more than 400 microns) according to a certain mass ratio; 2, raw materials are uniformly mixed, the raw materials are put into a high-frequency smelting furnace of vacuum induction smelting gas atomization pulverizing equipment, and smelting is carried out for multiple times under the protection of argon toobtain homogenized chromium-tantalum-boron alloy liquid; 3, a mother alloy liquid is guided into a high-temperature gas atomization furnace through a tundish, the alloy liquid flows into an atomization chamber to be subjected to gas atomization dispersion, and powder is obtained after cooling; and 4, the powder obtained in the third step is subjected to ultrasonic washing, drying and graded screening, and then a chromium-tantalum-boron alloy powder product is obtained. By limiting the raw materials and controlling the gas atomization process, the chromium-tantalum-boron alloy powder with the purity higher than 99.95% and the average particle size of 30 microns can be prepared, and the powder alloy powder is uniform in component, few in impurity and good in flowability. The method is simplein technological process and suitable for batch production, and the requirement of magnetron sputtering target material preparation for high-quality chromium-tantalum-boron alloy powder is met.

Description

technical field [0001] The invention belongs to the technical field of powder metallurgy, and in particular relates to a preparation method of chromium-tantalum-boron alloy powder. Background technique [0002] Ferroelectric memory is a nonvolatile memory that performs high-speed rewriting operations using high-speed reversal of the polarization of a ferroelectric film and its excellent remnant polarization. In traditional ferroelectric memory, transistors and capacitors are arranged horizontally, parallel to the surface of the silicon substrate. However, arranging transistors and capacitors in a stacked structure along the direction perpendicular to the substrate can greatly increase the data recording density. Generally, heat treatment at 550-800°C is required to ensure the crystallization of the film when preparing the ferroelectric thin film. However, during the heat treatment, the silicon element will diffuse into the platinum film layer of the capacitor through therm...

Claims

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Application Information

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IPC IPC(8): B22F9/08C22C29/14
CPCB22F9/082C22C29/14
Inventor 王永超陈耘田赵泽良仝红岩王留土郑海强史豪杰居炎鹏郭利乐刘占军李伟
Owner 河南东微电子材料有限公司