Light emitting diode and manufacturing method thereof
A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as dead lights, and achieve the effect of improving the abnormal phenomenon of dead lights and reducing metal mobility.
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Embodiment 1
[0048] See attached figure 2 and 3 ,in figure 2 A schematic top view structure diagram of the light emitting diode of this embodiment is shown; image 3 A schematic cross-sectional structure diagram of the light-emitting diode of this embodiment is shown.
[0049] This embodiment discloses a light emitting diode, which at least includes: a substrate 10; an epitaxial layer stacked on the substrate 10, which includes an N-type semiconductor layer 21, a light-emitting layer 22, a P-type semiconductor layer 23, and a transparent conductive layer 30 in sequence. .
[0050] Wherein, the material of the substrate 10 can be selected from Al 2 o 3 , SiC, GaAs, GaN, AlN, GaP, Si, ZnO, MnO any one or a combination of several. In this embodiment, a sapphire substrate 10 (sapphire substrate) is taken as an example, and the lattice direction may be (0001), for example, but the present invention does not limit the material and lattice direction of the substrate 10 used. The substrat...
Embodiment 2
[0067] In order to manufacture the light-emitting diode in Embodiment 1, this embodiment provides a manufacturing method, which specifically includes the following steps:
[0068] See attached Figure 4 , step 1) providing a substrate 10, growing an N-type semiconductor layer 21, a light-emitting layer 22, and a P semiconductor layer 23 sequentially on the substrate 10 to form an epitaxial layer;
[0069] Step 2) Making the first groove 41 and the second groove 42 in the epitaxial layer.
[0070] Specifically, etch the P-type semiconductor layer 23 to the N-type semiconductor layer 21 to form a first groove 41 and a second groove 42, and then make a transparent conductive layer 30 on the surface of the P-type semiconductor layer 23; A transparent conductive layer 30 is formed on the surface of the layer 23, and then the transparent conductive layer 30 is etched to the N-type semiconductor layer 21 to form a first groove 41 and a second groove 42. The positions of the first g...
Embodiment 3
[0080] See attached Figure 7 , the light-emitting diode provided by this embodiment, which includes: a substrate 10; an epitaxial layer stacked on the substrate 10, wherein the epitaxial layer includes an N-type semiconductor layer 21, a light-emitting layer 22, and a P-type semiconductor layer 23 stacked in sequence; and transparent conductive layer 30 . The specific structure of each layer has been described in detail in Embodiment 1, and will not be repeated here.
[0081] Wherein, a first metal structure 51 electrically connected to the N-type semiconductor layer 21 is disposed under the P electrode 71 , and a first insulating isolation layer 61 is provided between the first metal structure 51 and the P electrode 71 .
[0082] Specifically, etching forms the second groove 42 in the epitaxial layer. The etching method can be dry etching, wet etching or a combination of the two. In this embodiment, dry etching is used, and the second groove 42 The diameter of the opening ...
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