Low-warpage high-adhesion liquid mold sealing adhesive for gallium nitride power device and preparation method thereof
A power device, gallium nitride technology, applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of easy warping, unfavorable device and substrate filling, poor fluidity, etc., to achieve easy flow, Increase interaction, reduce aggregation effect
Inactive Publication Date: 2021-03-09
HUBEI CHOICE TECH CO LTD
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Problems solved by technology
Most of the existing mold sealants for GaN power devices are solid mold sealants with poor fluidity, which is not conducive to filling the gap between the device and the substrate; and there is also a phenomenon of easy warping
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[0022] In order to make the object, technical solution and beneficial effect of the present invention more clear, the specific implementation manners of the present invention will be further described in detail below. It should be understood that the described specific embodiments are only used to explain the present invention, and are not intended to limit the present invention.
[0023] The liquid mold sealant of the present invention comprises 10-30 parts by mass of epoxy resin, 15-40 parts by mass of curing agent, 0.1-5 parts by mass of curing accelerator, and 3-6 parts by mass of toughening modifier, 110-200 parts by mass of inorganic filler, 0.1-5 parts by mass of silane coupling agent. The epoxy resin adopts one or more of aminophenol trifunctional epoxy resin and naphthol epoxy resin; when using aminophenol trifunctional epoxy resin, you can choose MY0510, AFG-90H model products; when using naphthol Epoxy resin, specifically the 4032D model can be selected. The chemi...
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The invention discloses a low-warpage high-adhesion liquid mold sealing adhesive for a gallium nitride power device and a preparation method. The liquid mold sealing adhesive comprises the following components in parts by mass: 10-30 parts of epoxy resin, 15-40 parts of a curing agent, 0.1-5 part of a curing accelerator, 3-6 parts of a toughening modifier, 110-200 parts of inorganic filler and 0.1-5 part of a silane coupling agent. The epoxy resin is one or more of aminophenol trifunctional epoxy resin and naphthol epoxy resin; and the chemical structure of the toughening modifier is a highlybranched spheroidic dendritic structure, and the end group of the toughening modifier is hydroxyl. The liquid mold sealing adhesive has the functions of mold sealing and gap filling, and also has theadvantages of low warpage and high adhesive force.
Description
technical field [0001] The invention belongs to the technical field of preparation of gallium nitride power devices, and in particular relates to a low warpage and high adhesion liquid mold sealant for gallium nitride power devices and a preparation method thereof. Background technique [0002] Gallium Nitride, as a third-generation semiconductor material, offers several advantages over silicon. Gallium Nitride enables a performance leap in power conversion efficiency and power density compared to silicon devices. However, based on the lattice mismatch (about 17%) and thermal mismatch (about 118%) of the large-scale silicon substrate and the gallium nitride device are too large, it will cause cracks and warping of the epitaxial layer. The larger the substrate size, the warping The warping and cracking phenomenon is more serious. Therefore, it is necessary to obtain a GaN epitaxial layer without cracks, low warpage, and high crystal quality during the production of GaN devi...
Claims
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Login to View More IPC IPC(8): C09J163/00C09J11/04C09J11/06H01L23/29
CPCC08L2203/206C09J11/04C09J11/06C09J163/00H01L23/293H01L23/295C08K9/00C08K3/36C08K5/5435
Inventor 伍得廖述杭王义苏峻兴王圣权
Owner HUBEI CHOICE TECH CO LTD