Shielded gate field effect transistor and method for forming the same
A field effect transistor, shielded gate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of mutual restriction of turn-on voltage and leakage current, so as to overcome the mutual restriction of turn-on voltage and device leakage current, and improve the withstand voltage performance. , Improve the effect of leakage current
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[0031] As mentioned in the background, in the prior art, in order to reduce the turn-on voltage of the shielded gate field effect transistor, one method is to reduce the thickness of the gate oxide layer, and the other method is to reduce the ion concentration in the body region. However, this Both methods will cause leakage current phenomenon of the device while reducing the turn-on voltage of the device.
[0032] figure 1 It is a schematic diagram of the structure when the turn-on voltage is reduced by reducing the thickness of the gate oxide layer. Such as figure 1 As shown, by forming a thinner gate oxide layer 10, the formed shielded gate field effect transistor has a lower turn-on voltage. However, precisely because the required thickness of the gate oxide layer 10 is relatively thin, incomplete oxidation often occurs at the corner position 11 (for example, the sidewall at the corner position is difficult to fully contact with oxygen) when the oxidation process is perf...
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