KrF thick film photoresist additive and photoresist composition containing KrF thick film photoresist additive
A composition and photoresist technology, which can be used in photosensitive materials for opto-mechanical devices, compounds of Group 5/15 elements of the periodic table, optics, etc., which can solve the problem of limited types of photoacid generators and limited application scope. , the effect is not ideal, etc.
Pending Publication Date: 2021-03-12
SHANGHAI SINYANG SEMICON MATERIALS
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- Application Information
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Problems solved by technology
However, the types of photoacid generators applicable to it are limited, and its effect on widely used conventional photoacid generators such as triphenylsulfonium (TPS) is not ideal
This greatly limits its scope of application
Method used
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Experimental program
Comparison scheme
Effect test
Embodiment 1-6、 comparative example 1-3
[0092] The preparation method of photoresist composition:
[0093]The ionic light absorber of 1wt%, the photoacid generator of 5wt%, the photosensitive polymer of 30wt%, the organic solvent of 60wt%, the triethylamine of 2wt% and the salicylic acid of 2wt% are mixed at room temperature, Obtain photoresist composition 1-6 and comparative photoresist composition 1-3, wherein the plasma light absorber and photoacid generator in embodiment 1-6 and comparative example 1-3 are as shown in table 1;
[0094] Photosensitive polymers are (x 1 :y 1 :z 1 =66.5:8.5:25);
[0095] The organic solvent is propylene glycol methyl ether and propylene glycol methyl ether acetate (v / v=4:1).
[0096] Referring to the preparation method described in Example 1 of patent TW200741355A, photoresist compositions 1-6 and comparative photoresist compositions 1-3 were made into photoresist masks.
[0097] Table 1: Types of plasmonic light absorbers and photoacid generators in photoresist raw material...
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Abstract
The invention discloses a KrF thick film photoresist additive and a photoresist composition containing the KrF thick film photoresist additive. Specifically, the invention provides a photoresist composition which is prepared from the following raw materials: a plasma light absorber, a photoacid generator, a photosensitive polymer and an organic solvent, wherein the plasma light absorber is an acylphosphine oxide compound shown as a formula (I). According to the photoresist composition provided by the invention, the acyl phosphine oxide light absorber and the conventional photoacid generator are synergistically matched to generate better light transmittance, so that when the photoresist composition provided by the invention is used together with deep ultraviolet light, a photoresist pattern which has large thickness and can realize high-quality etching of a lower layer can be formed.
Description
technical field [0001] The present invention relates to photoresist compositions for KrF source (248nm) deep ultraviolet (DUV) light. Background technique [0002] At present, in the field of semiconductor manufacturing, KrF light source thick-film photoresist is used in the chip manufacturing process of LCD (liquid crystal display) / BUMP bump / MEMS micro-electromechanical / 3D-NAND memory. This type of photoresist is different from conventional The KrF thin-layer photoresist is also different from the photoresist of the ArF light source, but has its own unique properties. [0003] However, when the photoresist pattern is thick, the light transmittance of the photoresist may become a problem, and thus work to increase the light transmittance is required. However, the work of increasing light transmittance involves multiple optical issues, so multiple technical issues need to be solved simultaneously. [0004] In patent CN109581810A, phenolic compounds with electron-donat...
Claims
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Patent Timeline
Login to View More IPC IPC(8): G03F7/004H01L21/027C07F9/53
CPCG03F7/004G03F7/0045H01L21/0274C07F9/5337
Inventor 王溯方书农耿志月崔中越唐晨薛新斌王世建王志勇张君霍静静
Owner SHANGHAI SINYANG SEMICON MATERIALS