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Preparation method of transition metal diselenide film

A transition metal and diselenide technology, applied in the chemical field, can solve the problems that cannot meet the coating requirements of transition metal diselenide, and achieve the effect of smooth surface

Active Publication Date: 2021-03-16
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a kind of preparation method of transition metal diselenide thin film, aim to solve Metal diselenide MSe2 material cladding requirements on 3D structure substrates

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  • Preparation method of transition metal diselenide film
  • Preparation method of transition metal diselenide film
  • Preparation method of transition metal diselenide film

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Embodiment Construction

[0039] The present invention provides a method for preparing a transition metal diselenide thin film. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0040] Atomic layer deposition (ALD) has proven to be the most widely used preparation method for the synthesis of high-quality materials in many research fields. According to the characteristics of saturated, self-limiting surface chemical reactions, the atomic layer deposition process can perform controllable growth cycle by cycle with atomic-level precision, because the active species sites on the surface of the substrate (substrate) will be fully occupied, thereby Further chemisorption in each ALD half-cycle is prevented. Furthermore, atomic layer depo...

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Abstract

The invention discloses a preparation method of a transition metal diselenide film. The preparation method comprises the following steps of: providing a substrate; exposing a predetermined area of thesubstrate in the atmosphere of a transition metal precursor, and forming a transition metal precursor layer in the predetermined area of the substrate; dissociating the selenide compound through plasma, and obtaining the dissociated selenide compound; and exposing the transition metal precursor layer in the atmosphere of the dissociated selenide compound, and forming a transition metal diselenidefilm on the substrate. According to the preparation method, the transition metal diselenide film with high purity and smooth surface can be obtained.

Description

technical field [0001] The invention relates to the field of chemistry, in particular to a preparation method of a transition metal diselenide thin film. Background technique [0002] Transition metal (M=Fe, Co, Ni) diselenide (MSe 2 ) has recently received increasing attention in many research fields. Typically, MSe 2 There are two phases in the material in nature, namely cubic pyrite type (space group: Pa-3) and orthorhombic siderite type (space group: Pnnm), which are formed by the unique coordination points of metal atoms and Se 2 2- It is caused by the rotation combination of the group, so that different materials have different magnetic and (opto)electronic properties. Due to the structural difference, iron diselenide (FeSe 2 ) is a p-type semiconductor with a high optical absorption coefficient and a relatively narrow direct bandgap energy (~1eV); cobalt diselenide (CoSe 2 ) is a magnetic material, and has exchange-enhanced Pauli paramagnetism, and is also a met...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/455C23C16/50
CPCC23C16/305C23C16/45542C23C16/45553Y02P70/50
Inventor 王新炜国政
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL