Electrostatic protection circuit and display panel

Abstract

The invention discloses an electrostatic protection circuit and a display panel. The electrostatic protection circuit comprises: a first voltage reference unit which is used for carrying out the primary voltage division of a voltage between a row drive signal line and a common electrode line of an array substrate; a second voltage reference unit which is used for carrying out secondary voltage division on the voltage between the array substrate row driving signal line and the common electrode line; and a charge release unit which is used for adjusting charge distribution between the array substrate row driving signal line and the common electrode line based on the reference voltage provided by the first voltage reference unit and the second voltage reference unit. Compared with existing electrostatic protection circuits, the electrostatic protection circuit has larger leakage current under the condition of high voltage, can release accumulated electrostatic charges of row driving signal lines of the array substrate in time, and avoids the phenomenon of cross-line electrostatic breakdown of the circuit. When the circuit works normally at low voltage, the load of the array substraterow driving signal lines is not affected, and the reliability of the display panel is improved.

Description

technical field [0001] The invention relates to the field of display technology. More specifically, it relates to an electrostatic discharge protection circuit and a display panel. Background technique [0002] Oxide semiconductors represented by IGZO (indium gallium zinc oxide) are channel layer materials used in the new generation of TFT (Thin Film Transistor, Thin Film Field Effect Transistor) technology. Oxide TFTs have relatively high mobility High, good uniformity, low manufacturing cost and other advantages and in large-size AMLCD (Active Matrix Liquid Crystal Display, active matrix color liquid crystal display), AMOLED (Active-matrix organic light emitting diode, active matrix organic light emitting diode) and other displays It has wide application prospect in the panel. Compared with a-Si TFT (Amorphous Silicon Thin Film Field Effect Transistor), oxide TFT not only has higher mobility, but also has lower leakage current I off Therefore, the display pixels using o...

AI Technical Summary

Problems solved by technology

Oxide TFT-based GOA (Gate Driver on Array, array substrate row drive) circuit Oxide TFT has high mobility, TFT can achieve a smaller layout area (layout area), which is helpful for making narrow border panels, However, the low oxide leakage current also makes it difficult to release the charge in the GOA signal line. Compared with a-Si products, the GOA circuit signal line of the oxide TFT panel has ESD (Electro-Static Discharge, electrostatic discharge) higher risk

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