Active switch, manufacturing method thereof and display panel

Abstract

The invention discloses an active switch, a manufacturing method thereof and a display panel. The active switch comprises a substrate, a buffer layer, an active layer, a gate insulation layer, a firstgate, a second gate, a passivation layer, a source electrode and a drain electrode which are stacked in sequence; the active layer is composed of indium gallium zinc oxide; the first gate and the second gate are arranged in parallel. and is located between the source electrode and the drain electrode; the source electrode and the drain electrode penetrate through the passivation layer and are connected with the two ends of the active layer respectively. With the active switch with the double-top-gate structure adopted, the parallel double top gates are equivalent to two cascaded active switches which are controlled by the same gate signal; with the double-top-gate structure adopted, the off-state leakage current can be obviously reduced without influencing on-state current, so that the gate control capability can be improved, the electric leakage effect of a TFT is improved, and the stability of the indium gallium zinc oxide type active layer is improved.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an active switch, a manufacturing method thereof, and a display panel. Background technique [0002] In the field of liquid crystal display, the active layer of thin film transistors has been using silicon-based materials with excellent stability and processability. Silicon-based materials are mainly divided into amorphous silicon and polycrystalline silicon. Among them, the mobility of amorphous silicon materials is very low, and Although polysilicon material has high mobility, the uniformity of devices manufactured with it is poor, the yield rate is low, and the unit price is high. Therefore, in recent years, the technology of using a transparent oxide semiconductor film in a channel formation region to manufacture a thin film transistor (TFT) and the like, and to apply it to an electronic device or an optical device has attracted attention. Among them, field effect...

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Problems solved by technology

[0003] However, since InGaZnO has an amorphous structure, the presence of oxygen vacancies in the film will increase the carrier concentration of the film, making the characteristics of the active layer unstable, resulting in poor performance of the thin film transistor

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