Two-photon parallel direct writing device and method based on multi-dot matrix generation and independent control

Abstract

The invention discloses a two-photon parallel direct writing device and method based on multi-dot matrix generation and independent control. The device mainly comprises three core elements: a digitalmicro-mirror array DMD, a spatial light modulator SLM, and a micro-lens array MLA. The DMD equally divides an effective pixel region into N x N units, one unit corresponds to one light spot, m x m micro-mirrors contained in each unit of the DMD are independently turned on and off, and independent regulation and control of the light spot intensity and uniformity of each unit are achieved; the SLM equally divides the effective pixel region into N x N units, the units are in one-to-one correspondence with incident unit light spots, and phase control is independently carried out; and the MLA is used for generating a focus array, the number N x N of micro-mirrors of the MLA determines the number of dot matrixes, and then the dot matrixes are imaged to the focal plane of an objective lens through a convex lens and the objective lens to be processed. The device and the method have a gray level photoetching function, can rapidly process a curved surface structures and a true three-dimensionalmicro-structure with any shape and high uniformity, and can be applied to the fields of super-resolution lithography and the like.

Description

technical field [0001] The invention belongs to the field of micro-nano optical technology and the field of optical element processing and manufacturing, and more specifically relates to a two-photon parallel direct writing device and method based on multi-lattice generation and independent control. Background technique [0002] The spatial light modulator SLM and the digital micromirror array DMD can be used to modulate the light wavefront and the light field amplitude respectively. Combining them with the super-resolution two-photon direct writing technology will play both SLM (or DMD) and two-photon Advantages to achieve flexible and efficient processing of micro-nano structures. At present, although the two-photon direct writing technology based on DMD or SLM has achieved remarkable results in super-resolution realization and three-dimensional complex structure processing, it has not achieved particularly obvious results in improving the processing throughput. The incre...

AI Technical Summary

Problems solved by technology

At present, the main problem in making grayscale masks is that with the increase of grayscale, the difficulty and cost of fabrication will increase greatly; when using grayscale lithography technology to fabricate three-dimensional micro devices, it is limited by the grayscale mask image of free-form surface Generally, only three-dimensional microstructures whose surfaces are elementary analytical curved surfaces (such as curved surfaces and spherical surfaces) can be processed, and gray-scale masks of arbitrary shapes cannot be produced, so it is difficult to realize the production of three-dimensional microstructures including free-form surfaces; in addition , gray-scale lithography based on gray-scale masks can only be processed on the surface of the material, and cannot achieve true three-dimensional microstructure fabrication

However, grayscale lithography with point-by-point scanning and synchronous control of spot dose will have disadvantages such as low processing throughput and poor uniformity.

[0004] Literature [Optics & Laser Technology, 2019, 113:407-415] realizes a 70×110 light spot lattice through DMD and bilateral microlens spatial filter array, which greatly improves the flux, and controls the dose of each spot through DMD Grayscale lithography is used to achieve parallel processing of any free-form surface structure, but this solution cannot achieve independent and free control of the path of each spot, and the use of LED ultraviolet light source cannot realize true three-dimensional microstructure processing, and the obtained resolution is only in the Micron level

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