Numerical simulation method for fretting wear failure evolution of crimping type IGBT device
A fretting wear and numerical simulation technology, applied in design optimization/simulation, special data processing applications, etc., can solve the problems of relative slope change of contact surface, accelerated fretting wear failure, affecting the performance of crimp IGBT devices, etc.
Active Publication Date: 2021-04-02
CHONGQING UNIV
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Problems solved by technology
However, during the fretting wear failure process of the crimped IGBT device, the surface of the internal contact surface of the device is affected by cyclic pressure and displacement, and there is wear fatigue, which leads to changes in the relative roughness and relative slope of the contact surface, which in turn affects the performance of the crimped IGBT device. Accelerate the fretting wear failure aging process, which is the change of the characteristic parameters of the crimping IGBT device during the fretting wear aging process
Based on this background, the present invention proposes a numerical simulation calculation method for the fretting wear failure evolution of a crimping IGBT device in view of the phenomenon of contact surface wear during the fretting wear aging process of the crimping IGBT device
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[0054] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the diagrams provided in the following embodiments are only schematically illustrating the basic concept of the present invention, and the following embodiments and the features in the embodiments can be combined with each other in the case of no conflict.
[0055] Wherein, the accompanying drawings are for illustrative purposes only, and represent only schematic diagrams, rather than physical drawings, and should...
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The invention relates to a numerical simulation method for fretting wear failure evolution of a crimping type IGBT device, and belongs to the field of semiconductor devices. The modeling method comprises the steps that fretting wear failure simulation of the crimping type IGBT device is carried out, a crimping type IGBT device equivalent model containing contact layer fretting wear is established,and the fretting wear failure process of the crimping type IGBT device is simulated by setting contact surface wear loss; finite element modeling is conducted on the crimping type IGBT device, a crimping type IGBT device structure model is established, an IGBT chip comprises an aluminum plating layer, the fretting wear depth is set to exceed the thickness of the aluminum plating layer on the surface of the IGBT chip, and gate oxide layer failure is caused to serve as a simulation failure breakpoint. According to the invention, the change of characteristic parameters of the crimping IGBT device in the fretting wear failure dynamic process is simulated by setting the wear loss of the contact surface.
Description
technical field [0001] The invention belongs to the field of semiconductor devices, and relates to a numerical simulation method for fretting wear failure evolution of a crimping type IGBT device. Background technique [0002] The failure analysis of existing crimp-type IGBT devices mainly uses the failure data statistical method, which is often limited by the number of test samples, and most of the failure mechanisms are only studied under a single stress, making it difficult to analyze the performance of crimp-type IGBT devices during the fretting wear failure aging process Parameter changes, and the fretting wear aging process of the press-contact IGBT device is very important for the optimal design of the device and the reliable operation of the system. At present, the failure analysis of fretting wear of crimp-type IGBT devices is mainly based on the results of device power cycle experiments. In terms of multi-physics field simulation of crimp-type IGBT devices, the str...
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Login to View More IPC IPC(8): G06F30/23
CPCG06F30/23
Inventor 李辉姚然王晓刘人宽赖伟余越于仁泽何蓓
Owner CHONGQING UNIV