Evaporator for hydride vapor phase epitaxial growth of gallium nitride

A hydride gas phase and epitaxial growth technology, which is applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of not being able to withstand high temperature corrosive atmosphere and low volatilization efficiency, and achieve long service life, high volatilization efficiency, Not easy to be corroded by high temperature corrosive atmosphere

Active Publication Date: 2021-04-09
湖南德智新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The main purpose of the present invention is to provide an evaporator for hydride vapor phase epitaxial growth of gallium nitride, so as to solve the problems of low volatilization efficiency of gallium source in the prior art and inability to withstand high temperature corrosive atmosphere

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  • Evaporator for hydride vapor phase epitaxial growth of gallium nitride
  • Evaporator for hydride vapor phase epitaxial growth of gallium nitride

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Embodiment

[0024] see figure 1 with figure 2 , an evaporator 1 for hydride vapor phase epitaxial growth of gallium nitride according to an embodiment of the present invention, the evaporator 1 mainly includes a graphite substrate 2, and a silicon transition layer 3 is coated on the outer surface of the graphite substrate 2 , the outer surface of the silicon transition layer 3 is coated with a layer of TaC coating 4; and, the porosity of the TaC coating 4 gradually increases from the side close to the silicon transition layer 3 to the side away from the silicon transition layer 3 ; That is to say, the porosity of the TaC coating 4 gradually increases from the inside to the outside.

[0025] The above-mentioned evaporator 1 is coated with a silicon transition layer 3 on the outer surface of the graphite substrate 2, and the silicon transition layer 3 is used as a sacrificial protective layer to relieve thermal stress; the outer surface of the silicon transition layer 3 is coated with TaC...

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Abstract

The invention discloses an evaporator for hydride vapor phase epitaxial growth of gallium nitride. The evaporator comprises a graphite base material, wherein the outer surface of the graphite base material is coated with a silicon transition layer, the outer surface of the silicon transition layer is coated with a TaC coating, and the porosity of the TaC coating is gradually increased from the side close to the silicon transition layer to the side away from the silicon transition layer. According to the invention, the evaporator gallium source for hydride vapor phase epitaxy growth of gallium nitride is high in volatilization efficiency, the evaporator graphite base material is not prone to being corroded by high-temperature corrosive atmosphere, and the service life is longer.

Description

technical field [0001] The invention relates to the technical field of semiconductor material manufacturing, in particular to an evaporator for hydride vapor phase epitaxy growth of gallium nitride. Background technique [0002] Wide-bandgap semiconductors (such as SiC, GaN, and AlN) are used as next-generation optoelectronic, high-frequency, and high-power devices. During the epitaxial growth of SiC, the growth temperature is 1500-1700 ° C. When this crystal is grown epitaxially (by bulk growth or Epitaxial film growth), a big problem is that the vapor phase growth conditions of the reactor components (crucible, substrate and / or heater) are extremely harsh (high corrosive gas content at high temperature). Reactor components made of conventional low-cost heat-resistant materials such as graphite and SiC-coated graphite are inevitably damaged during the bulk / epitaxial growth of SiC and nitride, thereby affecting product quality and finished products. rates are adversely affe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B25/02
CPCC30B29/406C30B25/02
Inventor 余盛杰汪洋潘影刘佳宝柴攀万强
Owner 湖南德智新材料有限公司
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