Single-layer doped electron transport layer green phosphorescent device and preparation method and application thereof
A technology of electron transport layer and green phosphorescence, which is applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of easy-to-quench light-emitting layer and low triplet energy level, and achieve simple synthesis and purification, Promotes the formation of amorphous state, the effect of low molecular weight
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[0042] 1. Using naphthyl anthracenyl-substituted triazine derivatives NaAN-m-TRZ and NaAN-m-PhTRZ as a single-layer doped electron transport layer respectively, a high-efficiency green phosphorescent device was prepared by vacuum evaporation method, BPTRZ-Py -TPO device (prepared according to Chinese patent publication CN 110016053 A) was used as a comparison, and its performance was characterized.
[0043] The structures of high-efficiency green phosphorescent devices are:
[0044] Bottom emission green phosphorescent device: ITO / P008:p-dopant(100nm,4%) / HTL(15nm) / EBL(5nm) / HOST1:HOST2:green phosphorescent iridium complex (30nm,mass ratio 1:1: 0.3) / ETM:Liq (30nm, 1:1) / EIL / Al (2000). The doping ratios are all mass ratios.
[0045] Top-emitting green phosphorescent device: Ag / ITO / P008:p-dopant(147nm,4%) / HTL(15nm) / EBL(5nm) / HOST1:HOST2:green phosphorescent iridium complex (30nm,1:1: 0.3) / ETM:Liq(30nm,1:1) / EIL / Mg:Ag(15nm,1:9) / CP405(70nm).
[0046] Among them, P008:p-dopant is us...
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