A kind of LC composite mems pressure sensor and preparation method thereof
A pressure sensor and composite technology, applied in the direction of instruments, measuring force, measuring devices, etc., can solve the problems of difficult reliability of the electrodes of MEMS capacitive pressure sensors, and achieve the effect of simple structure, simple preparation process and wide application range
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Embodiment 1
[0037] like Figure 1-2 As shown, the LC composite MEMS pressure sensor proposed by the present invention includes a stacked first substrate 4 and a second substrate 7;
[0038] A pressure sensitive film 1 is formed on the upper surface of the first substrate 4; a first groove 3 is formed on the lower surface of the first substrate 4 opposite to the pressure sensitive film 1 by etching;
[0039] An LC sensitive body 2 is arranged on the lower surface of the pressure sensitive film 1, and the LC sensitive body 2 is located in the first groove 3;
[0040] The second groove 8 is arranged on the upper surface of the second substrate 7, and forms a vacuum chamber 12 with the first groove 3;
[0041] The third groove 9 is arranged on the lower surface of the second substrate 7 around and spaced apart from the second groove 8;
[0042] The inductor coil layer 10 is disposed on the bottom surface of the third groove 9 and the sidewall on one side away from the second groove 8 .
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Embodiment 2
[0062] The present invention also proposes a preparation method of an LC composite MEMS pressure sensor, specifically, the preparation method comprises the following steps:
[0063] a. Select a 500 μm thick N-type (100) single crystal silicon wafer as the first substrate 4, and obtain a first groove 3 with a depth of, for example, 480 μm and a thickness of, for example, 20 μm by photolithography and KOH anisotropic wet etching The pressure sensitive membrane 1;
[0064] b. Install the LC sensitive body 2 on the lower surface of the pressure sensitive film 1 by assembling, the LC sensitive body 2 is, for example, a yttrium iron pomegranate block, and its size is, for example: length×width×height=200 μm×200 μm×600 μm;
[0065] c. Select a 500 μm thick N-type (100) single crystal silicon wafer as the second substrate 7, and carry out photolithography and KOH anisotropic wet etching on the upper surface of the second substrate 7 to obtain a depth of, for example, 400 μm, A second...
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