Fast recovery diode and manufacturing method thereof

A technology for recovering diodes and anodes, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as high loss, long extraction time, and high device turn-off loss

Pending Publication Date: 2021-04-20
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the body region of the fast recovery diode has a large number of hole-electron pairs, it takes a long time to extract them, resulting in high turn-off loss of the device
Among them, the P-type anode region generally uses low-doped P-t

Method used

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  • Fast recovery diode and manufacturing method thereof
  • Fast recovery diode and manufacturing method thereof
  • Fast recovery diode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] This embodiment provides a fast recovery diode 20 .

[0036] like Figure 2a As shown, the fast recovery diode 20 includes a substrate 23 , an anode region 24 , an N-type doped region 26 , an anode metal layer 25 , a cathode region 22 and a cathode metal layer 21 .

[0037] A substrate 23 made of a lightly doped N-type semiconductor, a cathode region 22 formed of a heavily doped N-type semiconductor is formed below the substrate 23, and an anode region 24 formed of a P-type semiconductor is formed above the substrate 23, Among them, in order to reduce the injection of holes, a low-doped P-type semiconductor is generally used as the anode region 24, and the N-type doped region 26 is embedded in the anode region 24; above the anode region 24 (the side away from the substrate 23) An anode metal layer 25 is formed, and a cathode metal layer 21 is formed under the cathode region 22 (a side away from the substrate 23 ).

[0038] The specific position of the N-type doped reg...

Embodiment 2

[0042] This embodiment provides a fast recovery diode 30 .

[0043] see Figure 3a The fast recovery diode 30 includes a substrate 33 , an anode region 34 , an N-type doped region 36 , an anode metal layer 35 , a buffer layer 37 , a cathode region 32 and a cathode metal layer 31 .

[0044] A substrate 33 made of a lightly doped N-type semiconductor, a cathode region 32 formed by a heavily doped N-type semiconductor is formed under the substrate 33, and a cathode region 32 formed by a heavily doped N-type semiconductor is formed with a lightly doped N-type semiconductor. An N-type semiconductor buffer layer 37 with a lower doping concentration than the cathode region 32 and a higher doping concentration than the substrate 33 is arranged between the substrates 33 made of N-type semiconductors, so that the N-type doping concentration gradient is formed to reduce the fast Recover the loss after the diode is turned on; an anode region 34 formed by a P-type semiconductor is formed ...

Embodiment 3

[0051] see Figure 4 , Figure 4 It is a schematic top view structure diagram of the fast recovery diode 40 shown in this embodiment. In this embodiment, the doped region 46 includes a plurality of annular sub-doped regions 46a to 46d arranged at intervals; further, a plurality of annular sub-doped regions arranged at intervals The sub-doped regions 46a to 46d are in the shape of concentric rings.

[0052] The cross-sectional structure of the fast recovery diode 40 is the same as that of the first or second embodiment, and will not be repeated here.

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PUM

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Abstract

The invention relates to a fast recovery diode and a manufacturing method thereof, and belongs to the technical field of semiconductor devices. The fast recovery diode comprises: a substrate of a first conductivity type; an anode region of a second conductivity type over the substrate, wherein a doped region of a first conductivity type is embedded in the anode region; an anode metal layer over the anode region; a cathode region of the first conductivity type under the substrate; and a cathode metal layer below the cathode region. The doped region of the first conductivity type is introduced into the anode region of the second conductivity type, the contact between the surface of the anode region and the metal is not influenced, and the doped region of the first conductivity type can inhibit the hole injection efficiency of the anode region when the fast recovery diode is conducted. When the fast recovery diode is turned off, the doped region of the first conductivity type can generate electrons, so that holes of the body region are rapidly compounded, the purpose of reducing the turn-off loss of the device is achieved, and the performance of the device is improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to a fast recovery diode and a manufacturing method thereof. Background technique [0002] Fast Recovery Diode (FRD) is a semiconductor diode with good switching characteristics and short reverse recovery time. Because it can play the role of freewheeling, buffering and absorbing in power electronic circuits, and can be used at high It plays a rectifying role in high-frequency power electronic circuits, so it is widely used in low-voltage, high-voltage and ultra-high-voltage fields such as power systems and locomotive traction. [0003] The internal structure of the fast recovery diode is different from that of the ordinary PN junction diode. It belongs to the PIN junction diode. figure 1 A conventional fast recovery diode 10 is shown, mainly including an N-type lightly doped substrate 13, a P-type anode region 14 located above the N-type lightly doped substr...

Claims

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Application Information

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IPC IPC(8): H01L29/868H01L29/06H01L21/329
Inventor 刘鹏飞覃荣震王梦洁朱利恒丁杰
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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