Unlock instant, AI-driven research and patent intelligence for your innovation.

Composition for polishing pad and polishing pad

A composition and mixture technology, applied in the direction of grinding tools, etc., can solve problems such as adverse effects on human body and environment, high thermal stability, etc.

Active Publication Date: 2021-04-23
SK恩普士有限公司
View PDF28 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the use of MOCA as a hardening agent can improve physical properties and polishing properties to a certain extent, but in the CMP process that is used for a long time, not only higher thermal stability is required, but also contains harmful substances, so it is harmful to the human body and the environment. Negative Effects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composition for polishing pad and polishing pad
  • Composition for polishing pad and polishing pad
  • Composition for polishing pad and polishing pad

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0200] 1-1: Manufacture of polyurethane prepolymer

[0201] Toluene diisocyanate (TDI) and dicyclohexylmethane diisocyanate (H12MDI) as isocyanate compounds, polytetramethylene ether glycol (PTMEG) and diethylene glycol (DEG) as polyols were added to a four-necked flask , and reacted at 80°C for 3 hours to prepare a polyurethane prepolymer with an NCO group content of 9% by weight.

[0202] 1-2: Manufacture of polishing pad

[0203] In a casting apparatus equipped with tanks and input lines for separately supplying raw materials such as polyurethane prepolymer, curing agent, inert gas and blowing agent, the above-prepared polyurethane prepolymer is filled. In addition, 3,5-dimethylthio-2,6-diaminotoluene (3,5-dimethylthio-2,6-diaminotoluene; DMTDA) and 1,3-propanediol bis(4- Aminobenzoate) (1,3-propanediol bis(4-aminobenzoate), PDPAB) is filled with an amount of 80:20% by weight, and nitrogen (N 2 ) as an inert gas. In addition, based on 100 parts by weight of the composit...

Embodiment 2

[0207] A polishing pad was manufactured in the same manner as in Example 1 except that DMTDA as the first curing agent and PDPAB as the second curing agent were adjusted to a weight ratio of 60:40.

Embodiment 3

[0209] A polishing pad was manufactured in the same manner as in Example 1 except that DMTDA as the first curing agent and PDPAB as the second curing agent were adjusted to a weight ratio of 50:50.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
modulusaaaaaaaaaa
melting pointaaaaaaaaaa
storage modulusaaaaaaaaaa
Login to View More

Abstract

The composition of the present invention uses a curing agent mixture comprising a sulfur-containing first curing agent and an ester group-containing second curing agent to control the physical properties of the polishing pad as required. Specifically, the polishing pad prepared by including a first curing agent in the curing agent mixture at a higher content than a second curing agent can minimize the occurrence of defects such as scratches on the surface of a semiconductor substrate in a CMP process, while providing a high polishing rate. In addition, by making the content of the second curing agent in the curing agent mixture equal to or greater than the content of the first curing agent, even 4,4'-methylenebis(2-chloroaniline) (MOCA) is not used; according to the present invention, the polishing stability can be further improved by satisfying physical properties such as tensile strength and modulus, and by minimizing the reduction rate of the storage modulus according to the temperature change at a high temperature, even when the polishing agent is used as a polishing agent for polishing the surface of the polishing agent, such that the polishing stability can be further improved.

Description

technical field [0001] The present invention relates to a composition for a polishing pad applicable to a chemical mechanical polishing (CMP) process of a semiconductor device, a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad. Background technique [0002] In the semiconductor manufacturing process, the chemical mechanical polishing (CMP, Chemical Mechanical Polishing) process refers to attaching a semiconductor substrate such as a wafer to an indenter and contacting the surface of a polishing pad formed on a platen. In the case of the present invention, a slurry is provided to chemically react the surface of the semiconductor substrate, and at the same time, the pressing plate and the indenter are relatively moved to mechanically planarize the unevenness of the surface of the semiconductor substrate. [0003] As the necessary raw material that plays an important role in the above-men...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/24
CPCC08G18/10C08G2110/00C08G18/4854C08G18/3206C08G18/6674C08G18/7621C08G18/758C08G18/724C08J9/122C08J9/08C08J2375/04C08G18/3863C08G18/3243B24B37/24B24B37/22B24B37/26C08K5/18C08G18/3203C08K5/12C08G18/72
Inventor 尹钟旭徐章源许惠暎郑恩先
Owner SK恩普士有限公司