Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

DBC ceramic substrate with stress relaxation, thermoelectric device and preparation method thereof

A stress relaxation and ceramic substrate technology, applied in the field of semiconductor thermoelectric materials, can solve problems such as poor interconnection, deterioration of electrical conductivity, and pollution

Pending Publication Date: 2021-04-27
江阴市赛贝克半导体科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, their electrical conductivity is severely deteriorated compared with bulk materials, which may be caused by contamination, poor interconnect lines, severe carrier scattering, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • DBC ceramic substrate with stress relaxation, thermoelectric device and preparation method thereof
  • DBC ceramic substrate with stress relaxation, thermoelectric device and preparation method thereof
  • DBC ceramic substrate with stress relaxation, thermoelectric device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0030] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical conductivityaaaaaaaaaa
electrical conductivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a DBC ceramic substrate with stress relaxation, a thermoelectric device and a preparation method thereof. The DBC ceramic substrate comprises a direct bonding copper substrate, a multi-walled carbon nanotube and a copper film, wherein the direct bonding copper substrate comprises a copper bar and a ceramic plate, the copper bar is fixed on the ceramic plate, the surface of the copper bar is provided with a plurality of holes, and the holes are communicated with the copper film; the holes comprise submicron holes and / or nano holes, the multi-walled carbon nanotubes are printed on the surface of the copper bar to form a multi-walled carbon nanotube layer, and the copper film is plated on the multi-walled carbon nanotube layer. According to the DBC ceramic substrate, the thermoelectric device and the preparation method of the DBC ceramic substrate, thermal stress generated by temperature change and distribution can be greatly relaxed, thermoelectric power generation efficiency and the temperature adaptive capacity are improved, and the service life of the thermoelectric device is prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductor thermoelectric materials, in particular to a DBC ceramic substrate with stress relaxation, a thermoelectric device and a preparation method thereof. Background technique [0002] The surge in demand to develop a new energy supply strategy has spurred interest in new renewable energy technologies around the world. Thermoelectric technology, which can directly convert waste heat into electricity without maintenance, has become a rapidly developing hotspot for sustainable energy harvesting technologies. In recent years, the continuous discharge of industrial waste heat has caused global climate deterioration and waste of fossil fuels. Using TE conversion technology, the waste gas and waste heat discharged in the industrial production process can be successfully collected and converted into electrical energy, revealing that it can be used as an application for "energy saving and emission reducti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/15H01L23/14H01L21/48H01L35/02H10N10/80
CPCH01L23/15H01L23/142H01L21/4846H10N10/80
Inventor 刘宏章于道徐岭成伟葛芳萍
Owner 江阴市赛贝克半导体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com