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SiN/SiON/SiN laminated film of solar cell and preparation method of SiN/SiON/SiN laminated film

A technology of solar cells and thin films, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as poor passivation quality of anti-reflection films, improve minority carrier life and solar cell efficiency, improve stress distribution, and reduce backside electricity. composite effect

Pending Publication Date: 2021-04-27
江苏润阳世纪光伏科技有限公司
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Problems solved by technology

[0004] In order to solve the technical problem of poor passivation quality of the existing anti-reflection film, and provide a SiN / SiON / SiN laminated film of a solar cell and a preparation method thereof

Method used

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Embodiment 1

[0025] A method for preparing a SiN / SiON / SiN laminated film of a solar cell, comprising the steps of:

[0026] (1) Depositing a silicon nitride film on the back surface of the substrate by PECVD, the silicon nitride film (expressed as SiN) has a refractive index of 2.10-2.15 and a film thickness of 15 nm to 25 nm;

[0027] (2) Depositing a silicon oxynitride film on the surface of the silicon nitride film by PECVD, the silicon oxynitride film (expressed as SOiN) has a refractive index of 2.10-2.15 and a film thickness of 15 nm to 25 nm;

[0028] (3) Depositing a silicon nitride film on the surface of the silicon nitride oxide film by PECVD method, the refractive index of the silicon nitride film is 2.10-2.15, and the film thickness is 30nm~40nm;

[0029] Finally, a SiN / SiON / SiN laminated film is sequentially obtained on the back surface of the substrate.

[0030] Wherein, the refractive index of the silicon nitride film described in the step (1) is controlled by the reaction ...

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Abstract

The invention relates to a SiN / SiON / SiN laminated film of a solar cell and a preparation method of the SiN / SiON / SiN laminated film. The preparation method comprises the following steps of (1) depositing a silicon nitride film on the back surface of a substrate by adopting a PECVD method; (2) depositing a silicon oxynitride thin film on the surface of the silicon nitride thin film by adopting a PECVD method; (3) then depositing on the surface of the silicon oxynitride thin film by adopting a PECVD method to form a silicon nitride thin film; finally, SiN / SiON / SiN laminated films being sequentially obtained on the back surface of the substrate, the comprehensive film thickness ranging from 70 nm to 90 nm, and the refractive index ranging from 2.08 to 2.10. The method is advantaged in that the SiN / SiON / SiN laminated film can reduce electrical recombination of the back surface of the solar cell and improve the passivation effect.

Description

technical field [0001] The invention relates to the technical field of film coating on a substrate, in particular to a SiN / SiON / SiN stacked thin film of a solar cell and a preparation method thereof. Background technique [0002] Crystalline silicon solar cells are the earliest studied and most widely used typical p-n junction solar cells. Its main process includes: preparation of textured surface, preparation of p-n junction, deposition of anti-reflection film, preparation of aluminum back field, and preparation of front and back electrodes. The preparation of suede can effectively reduce the reflection of sunlight and enhance light absorption, and the anti-reflection film can also achieve this function. The basic principle of the anti-reflection coating: the optical path difference generated when the light is reflected on the upper and lower surfaces of the anti-reflection coating will cause the two beams of reflected light to interfere and cancel, thereby reducing the ref...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/1804Y02E10/547Y02P70/50
Inventor 李学峰
Owner 江苏润阳世纪光伏科技有限公司
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