A kind of semiconductor structure and its forming method

Abstract

The invention relates to the technical field of semiconductors, and discloses a semiconductor structure and a manufacturing method thereof. The method includes: providing a semiconductor substrate, forming a doped region on the surface of the semiconductor substrate; the doping concentration of nitrogen in the doped region gradually decreases from bottom to top; depositing a barrier on the surface of the doped region layer; the barrier layer includes: aluminum-doped silicon oxide; the surface of the barrier layer is covered with a photoresist layer to perform a photolithographic exposure and development process. The present invention deposits a barrier layer on the surface of the doped region of the semiconductor substrate, and the barrier layer contains aluminum ions to neutralize the free nitrogen ions in the doped region, avoiding the process of silicon oxynitride during the photolithographic exposure and development process. When used as a substrate, the acid of the boundary resist reacts with nitrogen, which reduces the solubility of the resist, causes photoresist poisoning, produces footings, and affects the process after etching. In this way, photoresist poisoning is prevented from affecting etching, and the yield rate of the photolithography exposure and development process is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] Photoresist is a large class of polymer materials with photosensitive chemical operations or sensitive to electron energy. It is a medium for transferring patterns by ultraviolet exposure or electron beam exposure. The role of photoresist is to protect the surface of the substrate as an anti-etching layer. Photoresist is usually uniformly covered on the surface of the substrate in the form of a thin film. When irradiated by ultraviolet light or electron beams, the characteristics of the photoresist material itself will change. After developing with the developer, the exposed negative photoresist or The unexposed positive photoresist will remain on the surface of the substrate, so that the designed micro-nano structure is transferred to the photoresist, and the subsequent etching, deposit...

AI Technical Summary

Problems solved by technology

When silicon oxynitride is used as the substrate, the acid that decomposes the resist reacts with nitrogen, which reduces the solubility of the resist, causes photoresist poisoning, and reduces the solubility of the resist at the bottom and corners, thereby forming a substrate. Footing issue, affecting the process after etching, resulting in failure of pattern transfer

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