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High-density MOM capacitor structure and design method thereof

A technology of capacitor structure and design method, applied in capacitors, electric solid devices, circuits, etc., can solve the problems of semiconductor fractal capacitors deviating from design values ​​and fractal capacitor layout corners.

Active Publication Date: 2021-05-07
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the layout of fractal capacitors has many corners, and the capacitance value is greatly affected by the process. The actual capacitance value of semiconductor fractal capacitors often deviates from the design value

Method used

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  • High-density MOM capacitor structure and design method thereof
  • High-density MOM capacitor structure and design method thereof
  • High-density MOM capacitor structure and design method thereof

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Embodiment Construction

[0037] In order to make the object, advantage, technical solution and implementation of the present invention clearer, the present invention will be further described in detail below in conjunction with the examples and accompanying drawings, but the protection scope of the present invention should not be limited.

[0038] The design method of high-density capacitor structure of the present invention, described high-density capacitor structure is a kind of metal-oxide-metal (MOM) capacitance structure, and this method comprises the following steps:

[0039] 1) First determine the minimum line width, minimum spacing, and minimum line end spacing of the CMOS process used (use the design rule requirements, use Cadence Virtuoso's Layout XL tool or any other circuit layout drawing tool, and meet the design rules In the case of , draw two linear metal strips representing the upper and lower plates of the capacitor;

[0040] 2) Select the basic structural unit: select the direction o...

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Abstract

The invention discloses a design method of a high-density capacitor structure. The high-density capacitor structure is a novel metal-oxide-metal (MOM) capacitor structure, the capacitance value of the capacitor can be changed by changing the number of turning times, the number of groups and a reconstruction mode, and the high-density MOM capacitor structure has the advantages of being high in expandability, high in capacitance density and small in photoetching error. The high-density MOM capacitor structure is applied to occasions requiring high-density or high-precision integrated capacitors, such as a switched capacitor circuit, a sampling hold circuit and an instrument amplifier.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a reconfigurable high-density MOM capacitor structure and a design method thereof. Background technique [0002] Capacitors are widely used in integrated circuits. With the continuous development of CMOS technology, the integrated circuit market is further diversified and specialized. Reconfigurable capacitor structures are required to obtain different capacitance values ​​to meet new integrated circuit market needs. Compared with MIM capacitors (Metal-Insulator-Metal, metal-dielectric-metal), MOM (Metal-Oxide-Metal, metal-oxide-metal) capacitors have good capacitance matching and process compatibility, and are widely used in In analog circuits and radio frequency circuits. [0003] The capacitance value of the traditional MOM capacitor structure is positively related to the area of ​​its plate. The capacitor is composed of a finger-shaped first electrode and a second ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L49/02H10N97/00
CPCH01L28/60H01L28/75
Inventor 李永福黄家杰陆叶王青王国兴连勇
Owner SHANGHAI JIAO TONG UNIV