Polymerization curing device and preparation method for preparing polyimide patterned film
A technology for preparing polyimide and thin films, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of limiting the density of packaging and wiring, deformation of the three-dimensional topography of the film, and changing the topography integrity of the patterned film.
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Embodiment 1
[0035] Such as figure 1 As shown, a polyimide patterned film preparation polymerization curing device, including a cavity 100, on the cavity 100 can be completely isolated from the outside world can be closed door (not shown), the cavity 100 side wall pre-prepared A number of cooling circulating water pipes 110 are buried, and a lifting platform 300 is provided in the cavity 100. A wafer support 200 is provided on the lifting platform 300. The wafer support 200 is provided with a plurality of heating plates that can individually heat the wafer along the vertical direction. 210, the cavity 100 is also provided with a nitrogen gas inlet 400, an air pressure detection device 700, a temperature detection device 600, and a vacuum pump 500, the temperature detection device 600 is a temperature sensor, and the detection direction of the temperature sensor is directed toward any wafer The heating plate 210 on the support 200.
[0036] A nitrogen inlet and a vacuum pump connected to t...
Embodiment 2
[0047] Such as Figure 1 to Figure 4 Shown, a kind of preparation method of polyimide patterned film comprises the following steps:
[0048] 1) The manipulator clamps and transports multiple wafers to each heating plate 210 in the cavity 100;
[0049] 2) Close the sealable door, and vacuumize the cavity 100, so that the air pressure in the cavity 100 reaches a vacuum state of the order of mTorr;
[0050] 3) heating the cavity 100 at a rate of 0.5-4°C / s to 80°C;
[0051] 4) The cavity 100 is kept at 80°C for 60-600s;
[0052] 5) heating the cavity 100 at a rate of 0.02-0.1°C / s to 230°C;
[0053] 6) The cavity 100 is kept at 230°C for 1800s;
[0054] 7) Cool down the cavity 100 at a rate of 2-5° C. / s to room temperature.
[0055] In step 2) to step 6), the vacuum state of mTorr level is always maintained in the cavity 100 .
[0056] In step 2) to step 6), while the nitrogen generator is supplying nitrogen, the vacuum pump 500 is turned on at the same time to evacuate, so t...
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