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Nitrogen-doped carbon-coated indium sesquioxide hexagonal sheet photocatalyst as well as synthesis method and application thereof

A technology of indium trioxide and photocatalyst, which is applied in physical/chemical process catalysts, chemical instruments and methods, chemical/physical processes, etc. Compounding etc.

Inactive Publication Date: 2021-05-14
XUZHOU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 2 o 3 While it has advantages, it also has disadvantages, such as: under light conditions, In 2 o 3 The photogenerated electrons and photogenerated holes are prone to secondary recombination, which seriously affects its application in the field of visible light catalysis.

Method used

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  • Nitrogen-doped carbon-coated indium sesquioxide hexagonal sheet photocatalyst as well as synthesis method and application thereof
  • Nitrogen-doped carbon-coated indium sesquioxide hexagonal sheet photocatalyst as well as synthesis method and application thereof
  • Nitrogen-doped carbon-coated indium sesquioxide hexagonal sheet photocatalyst as well as synthesis method and application thereof

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Experimental program
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Embodiment

[0022] Step 1: Synthesis of In(2,5-PDC) precursor

[0023] Dissolve 0.0373g of indium nitrate tetrahydrate and 0.03g of 2,5-pyridinedicarboxylic acid in a mixed solution of 4mL N,N-dimethylformamide and 6 mL of water. After ultrasonication for 10 minutes, transfer the above mixed solution to a 50mL poly Heat it to 120°C in a tetrafluoroethylene autoclave, and the reaction time is 4h. The product was collected by centrifugation, washed with absolute ethanol several times, and dried in a drying oven to obtain the In(2,5-PDC) precursor with a hexagonal sheet structure.

[0024] Step 2: Synthesis of N-C / In 2 o 3 Hexagonal photocatalyst.

[0025] Take a certain amount of In(2,5-PDC) precursor, put it into a muffle furnace, and calcinate it at 380°C for 1h at a heating and cooling rate of 2°C / min.

[0026] figure 1 (a-c) are scanning electron microscope images (SEM) of the In(2,5-PDC) precursor prepared in the embodiment of the present invention, figure 1 (d-h) are In(2,5-PDC)...

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Abstract

The invention relates to a synthesis method of a nitrogen-doped carbon-coated indium sesquioxide hexagonal sheet photocatalyst, wherein the synthesis method comprises the steps: dissolving indium nitrate tetrahydrate and 2,5-dipicolinic acid in an organic solvent and water, carrying out ultrasonic treatment for 10 minutes, transferring into a reaction kettle, heating for a period of time, after the reaction is finished, centrifugally collecting a product, cleaning and drying to obtain an In (2,5-PDC) precursor with a hexagonal sheet structure; and calcining the In (2,5-PDC) precursor in air to obtain the N-C / In2O3 hexagonal sheet photocatalyst. According to the invention, the N-C / In2O3 hexagonal sheet photocatalyst is synthesized through solvothermal and calcination methods, and the synthesized photocatalyst has higher photocatalytic activity than commercial In2O3.

Description

technical field [0001] The invention relates to nanometer materials, in particular to a synthesis method of a nitrogen-doped carbon-wrapped diindium trioxide hexagonal plate photocatalyst. Background technique [0002] In recent years, In 2 o 3 Due to its unique In 3+ the d 10 The electronic configuration and suitable conduction and valence band positions, as well as good thermal stability and strong fluorescence signals in the visible and ultraviolet regions, have attracted extensive attention from experts. In 2 o 3 While it has advantages, it also has disadvantages, such as: under light conditions, In 2 o 3 The photogenerated electrons and photogenerated holes are prone to secondary recombination, which seriously affects its application in the field of visible light catalysis. Contents of the invention [0003] The purpose of the present invention is to provide a method for simply synthesizing nitrogen-doped carbon-wrapped diindium trioxide hexagonal plate photoc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24
CPCB01J27/24B01J35/39
Inventor 韩锡光沈秋艳
Owner XUZHOU NORMAL UNIVERSITY