Semiconductor structure and forming method thereof
A semiconductor and gas technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of reducing the yield rate of semiconductor devices and manufacturing process limitations, so as to improve yield rate, improve graphic accuracy, and reduce roughness Effect
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[0036] As mentioned in the background art, further improvement of the fabrication process of self-aligned multiple imaging technology is required.
[0037] Figure 1 to Figure 5 It is a schematic cross-sectional structure diagram of the pattern forming process of a self-aligned dual imaging technology;
[0038] Please refer to figure 1 , forming a layer 20 to be etched on the semiconductor substrate 10;
[0039] Please refer to figure 2 , forming a sacrificial material layer (not shown) to be etched on the surface of the layer to be etched 20, etching the sacrificial material layer to be etched to form a patterned sacrificial layer 30, exposing a part of the sacrificial material layer to be etched the surface of the etch layer 20;
[0040] Please refer to image 3 , deposit a sidewall material layer (not shown) with a relatively uniform thickness on the surface of the patterned sacrificial layer 30 and the surface of the layer 20 to be etched, and etch the sidewall mater...
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