Tantalum target material and treatment method of sputtering surface of tantalum target material

Abstract

The invention provides a tantalum target material and a treatment method of a sputtering surface of the tantalum target material. The treatment method comprises turning and polishing which are carried out in sequence; in the turning process, a blade is adopted to feed from the edge to the center in the diameter direction of the tantalum target material, the turning comprises rough turning and finish turning which are carried out in sequence, the cutting depth is kept constant in the rough turning process and the finish turning process, the finish turning comprises 8 to 12 times of the turning, and the allowance of the finish turning is 0.3 to 0.6 mm; in the polishing process, abrasive paper is adopted firstly, then a scouring pad is adopted for polishing the turning surface of the tantalum target material, and the sputtering surface roughness Ra of the tantalum target material is less than or equal to 0.4 [mu]m. According to the treatment method, surface defects such as protrusions and pits on the surface of the target material in the machining process and a turning extrusion layer are effectively prevented, meanwhile, grinding wheel polishing in a later period is avoided, the quality of the target material is improved, and the service life is prolonged.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, and relates to a tantalum target, in particular to a treatment method for a tantalum target and a sputtering surface thereof. Background technique [0002] Sputtering target is one of the important raw materials in the process of semiconductor integrated circuit preparation, and it is mainly used for the preparation of physical vapor deposition films such as contacts, through holes, interconnect lines, barrier layers, and packaging in integrated circuits. In the magnetron sputtering process, accelerated ions are used to bombard the target surface so that the target atoms are deposited on the substrate surface, thereby forming a deposited film. [0003] Tantalum element mainly exists in tantalite and coexists with niobium. The metal tantalum is moderately hard and ductile, and can be drawn into thin filaments to make thin foils. Its thermal expansion coefficient is very small, and it ...

AI Technical Summary

Problems solved by technology

However, the subsequent grinding with a belt machine is required to remove the central cone. Long-term grinding will cause uneven grinding, edge collapse, etc., and even lead to deformation of the sputtering surface, seriously affecting the quality and service life of the target.

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