Trench gate power device and preparation method thereof

Abstract

The embodiment of the invention provides a trench gate power device and a preparation method thereof, and the preparation method of the trench gate power device comprises: forming a trench gate type MOS structure in a semiconductor substrate, wherein the trench gate type MOS structure comprises a body region, a first trench, a second trench, a first insulating layer, a second insulating layer, a third insulating layer, first polycrystalline silicon, second polycrystalline silicon, a source region and a fourth insulating layer; sequentially depositing a stop layer and an interlayer dielectric layer; etching the interlayer dielectric layer, the stop layer and the first insulating layer to form a first contact hole; etching the body region around the first groove and the bottom of the first contact hole; and doping the surface of the body region around the first groove to form a contact region. According to the scheme, the conducting layer can be uniformly manufactured in the main unit area to lead out the electrode, so that the process control difficulty is reduced, the yield is improved, and the manufacturing cost is reduced.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a trench gate power device and a manufacturing method thereof. Background technique [0002] Power semiconductor devices are the basic electronic components for energy conversion and control in power electronic systems. The continuous development of power electronics technology has opened up a wide range of application fields for power semiconductor devices. MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal oxide Power semiconductor devices marked by IGBT (Insulated Gate Bipolar Transistor) and IGBT (Insulated Gate Bipolar Transistor) are the mainstream in the field of power electronic devices today. [0003] The gate structure of MOSFET and IGBT includes trench type and planar type. The trench gate is usually formed by growing a gate oxide layer on the sidewall of the trench and filling it with polysilicon. This gate structure improves the utili...

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Problems solved by technology

[0005] In the embodiment of the present application, a trench gate power device and its preparation method are provided, which are used to solve the problems of difficult process control, reduced yield, and high manufacturing cost in the preparation of power semiconductor devices

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