Resistive random access memory, memory device, chip and preparation method of resistive random access memory

A technology of resistive memory and resistive layer, which is applied in the field of microelectronics and can solve problems affecting the reliability of resistive memory

Pending Publication Date: 2021-05-25
HUAWEI TECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The embodiment of the present application provides a resistive variable memory, a storage device, a chip and a preparation method of the resistive variable memory, which solves the problem that the internal holes of the tungsten plug affect the reliability of the resistive variable memory

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  • Resistive random access memory, memory device, chip and preparation method of resistive random access memory

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Embodiment Construction

[0034] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. Apparently, the embodiments described below are only a part of the embodiments of the present application, rather than all the embodiments.

[0035] Hereinafter, the terms "first", "second", etc. are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first", "second", etc. may expressly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0036] In addition, in the following embodiments of the present application, orientation terms such as "upper" and "lower" are defined relative to the...

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Abstract

The embodiment of the invention discloses a resistive random access memory, a memory device, a chip and a preparation method of the resistive random access memory, and the resistive random access memory comprises a tungsten plug which is used for connecting a transistor connected with the resistive random access memory; the resistive random access memory also comprises a storage unit that is used for storing data, and the storage unit is located above the tungsten plug and comprises a metal plug, the metal plug is located above the tungsten plug, the ratio of the axial size to the radial size of the metal plug is smaller than the ratio of the axial size to the radial size of the tungsten plug, and the metal plug is used as a lower electrode of the storage unit; a resistive layer is positioned above the metal plug and is used for storing data; and an upper electrode is positioned above the resistive layer. Therefore, the metal plug with a relatively small ratio of the axial size to the radial size is prepared on the tungsten plug to serve as the lower electrode, so that the stability of the resistive random access memory can be prevented from being influenced by holes in the tungsten plug, and the reliability of the device is improved.

Description

technical field [0001] The embodiments of the present application relate to the technical field of microelectronics, and in particular to a resistive variable memory, a storage device, a chip, and a method for preparing the resistive variable memory. Background technique [0002] Resistive Random Access Memory (RRAM) is a non-volatile memory based on the reversible conversion between a high-resistance state and a low-resistance state by the resistance of a non-conductive material under the action of an external electric field. [0003] Resistive memory has the characteristics of fast speed, simple structure, low power consumption, and compatibility with complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) process, etc., and is considered to be the most potential to replace embedded flash memory in embedded applications. one of the candidates. [0004] In the existing preparation scheme of the resistive variable memory integrated with CMOS,...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/00H10N70/801H10N70/011
Inventor 许晓欣吕杭炳张锐王侃文刘明
Owner HUAWEI TECH CO LTD
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