Preparation method of bismuth sodium bismuth titanate layered piezoelectric ceramic

A technology of bismuth, sodium, bismuth titanate and piezoelectric ceramics, which is applied in the field of piezoelectric ceramics preparation, can solve the problems of reducing the stability and reliability of sensors, reducing the high-temperature resistivity of piezoelectric ceramics, and not being suitable for large-scale industrial production. Achieve the effects of improving electrical properties, increasing high temperature resistivity, and improving piezoelectric properties

Inactive Publication Date: 2021-05-28
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although some researchers currently use Ta or Ta, Nb and other single or compound doping methods to replace the B-site ions of BNT, the piezoelectric constants are all below 30pC / N, which makes the sensitivity of the acceleration sensor low in actual use.
Some researchers also use the template grain growth method to align the ceramic grains in order to improve the piezoelectric performance of BNT piezoelectric ceramics, but these methods will reduce the high-temperature resistivity of piezoelectric ceramics and reduce the stability of the sensor when it is used at high temperature. performance, reliability, and these methods are not suitable for large-scale industrial production

Method used

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  • Preparation method of bismuth sodium bismuth titanate layered piezoelectric ceramic

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Embodiment 1

[0032]Example 1, a method for preparing a titanate sodium laminate layer piezoelectric ceramic, and the preparation method is as follows:

[0033](1), ingredient

[0034]Put the raw material NA2CO3, BI2O3, TIO2And Co2O3, According to the following meter:

[0035]NA0.5BI4.5Ti4-xCOxO15-x / 2Mix, X = 0.05 in the formula. In the formula, from left to right of 0.5, 4.5, 4-x, X, 15-x / 2 are the molar content of the raw material. Take the total mass of 400.000g powder as an example, weigh NA2CO3, BI2O3, TIO2And Co2O3The mass was 7.586 g, 300.167 g, 91.050g and 1.197 g. (Universal in the piezoelectric ceramic industry shown above). After mixing the feedstock, it is placed in a ball mill, and the ball mill is anhydrous ethanol and agate ball, agate ball, raw material, absolute ethanol, 1.0: 0.7: 0.5, ball milling time is 8 h, ball mill frequency is 33.5 Hz; The mixture was then placed in an oven at 100 ° C, then placed in a mortar, and the mixture was formed into a mixed raw material.

[0036](2), synthe...

specific Embodiment

[0051]X = 0, the sintering temperature is 1040 ° C, 1060 ° C, 1080 ° C, 1100 ° C, respectively, respectively, in Examples 1-1, 1-2, 1-3, 1-4;

[0052]X = 0.025, the sintering temperature is 1040 ° C, 1060 ° C, 1080 ° C, 1100 ° C, respectively, in Examples 2-1, 2-2, 2-3, 2-4, respectively;

[0053]X = 0.050, the sintering temperature is 1040 ° C, 1060 ° C, 1080 ° C, 1100 ° C, respectively, separately as Examples 3-1, 3-2, 3-3, 3-4;

[0054]X = 0.075, the sintering temperature was 1040 ° C, 1060 ° C, 1080 ° C, 1100 ° C, respectively, respectively, in Examples 4-1, 4-2, 4-3, 4-4, respectively.

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Abstract

The invention discloses a preparation method of bismuth sodium titanate layered piezoelectric ceramic. The stoichiometric equation of the bismuth sodium titanate layered piezoelectric ceramic is Na0.5Bi4.5Ti<4-x>CoxO<15-x / 2>. A traditional solid-phase reaction method is adopted, the electrical property is improved through adjustment and improvement of a raw material formula and a process and adjustment of the content of B-site doped ions, the optimal sintering temperature is 1,080 DEG C, when x is equal to 0.050, the piezoelectric constant d33 is equal to 33pC / N; when the temperature is 482 DEG C, the high-temperature resistivity rho V is equal to 5.87 * 10 <7> ohm.cm, the Curie temperature Tc is equal to 673 DEG C, the dielectric loss tan(delta) is equal to 0.35%, and the sensitivity of a high-temperature acceleration sensor assembled by using the material can still be kept at 9.54 pC / g at 400 DEG C. The process is simple, can effectively reduce the cost and is suitable for large-scale industrial production.

Description

Technical field[0001]The present invention relates to the preparation of piezoelectric ceramics, and more particularly to the preparation method of titanium titanate sodium laminate layer piezoelectric ceramics.Background technique[0002]Piezoelectric ceramics can achieve conversion between mechanical energy and electrical energy, is an important electronic function ceramic material, which is widely used in some energy conversion, filtering, storage and other devices in electrical, light, sound, and heat. In recent years, with further expansion of piezoelectric ceramic applications, new challenges have been made in some extreme environments. For example, high temperature acceleration sensors, etc. must be used with piezoelectric ceramics having a higher ridal temperature, so that the piezoelectric device can be operated in a wider temperature range.[0003]In numerous piezoelectric ceramic materials, NA0.5BI4.5Ti4O15Bismuth laminated piezoelectric ceramics is an important lead-free and...

Claims

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Application Information

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IPC IPC(8): C04B35/475C04B35/622C04B41/88
CPCC04B35/475C04B35/622C04B41/5116C04B41/88C04B2235/3298C04B2235/3275C04B2235/442
Inventor 张飞洋闫锋张楠杨声帅赵斌娄岳李宝珠
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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